In this paper the preparation and characterization of the ceramic material (K0.5Na0.5)NbO3 (KNN) has been studied. Although conventional processing of KNN is often reported to result in sintered bodies lacking sufficient density, samples produced in this w ...

2006

Nonvolatile gate effect in a ferroelectric-semiconductor quantum well

Nava Setter, Enrico Colla, Igor Stolichnov

2006

Anharmonicity of BaTiO3 single crystals

Dragan Damjanovic, Nava Setter, Alexander Tagantsev

2006

Ferroelectric-dielectric tunable composites

Nava Setter, Alexander Tagantsev

The dielectric response of ferroelectric-dielectric composites is theoretically addressed. Dielectric permittivity, tunability (relative change of the permittivity driven by dc electric field), and loss tangent are evaluated for various composite models. T ...

2006

In-plane versus out-of-plane dielectric response in the thin-film relaxor Pb(Sc1/2Ta1/2)O-3

Nava Setter, Alexander Tagantsev, Kyle Brinkman

2006

Epitaxial growth of (SrBa)Nb2O6 thin films on SrTiO3 single crystal substrate

Paul Muralt, Nava Setter, Marco Cantoni, Anna Infortuna

2006

Electric-field-, temperature-, and stress-induced phase transitions in relaxor ferroelectric single crystals

Dragan Damjanovic, Nava Setter, Matthew Davis

Electric-field-induced phase transitions have been evidenced by macroscopic strain measurements at temperatures between 25 degrees C and 100 degrees C in 001-poled (1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) [(PMN-xPT);x=0.25,0.305,0.31] and (1-x)Pb(Zn1/3Nb2/3)O ...

2006

Raman spectroscopy of sputtered AlN films: E-2(high) biaxial strain dependence

Paul Muralt, Nava Setter, Harry Joseph Trodahl

2006

Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN/GaN heterostructures

Paul Muralt, Nava Setter, Igor Stolichnov, Lisa Malin

The concept of a field-effect transistor with ferroelectric gate has been implemented using the GaN/AlGaN heterostructure combined with Pb(Zr,Ti)O-3 ferroelectric layer. The processing conditions were optimized in a way to obtain textured Pb(Zr,Ti)O-3 film ...

2006

Extension of the dielectric tunability range in ferroelectric materials by electric bias field antiparallel to polarization

Dragan Damjanovic, Nava Setter, Marko Budimir

While in the paralectric phase of ferroelectrics, and in centrosymmetric materials in general, the dielectric tunability is symmetrical for positive and negative electric bias fields, in noncentrosymmetric materials this is not the case. By using the therm ...

2006

Epitaxial/amorphous Ba0.3Sr0.7TiO3 film composite structure for tunable applications

Paul Muralt, Nava Setter, Alexander Tagantsev

2006

Dielectric properties of Zr-modified Pb(Mg1/3Ta2/3)O-3 ceramic: Influence of pressure, biasing electric field, and B-site cationic order

Nava Setter, Yi Wang

2006

Ionic polarizability of conductive metal oxides and critical thickness for ferroelectricity in BaTiO3

Nava Setter, Alexander Tagantsev, Guido Gerra

We report a first-principles investigation of ultrathin BaTiO3 films with SrRuO3 electrodes. We find that the ionic relaxations in the metal-oxide electrode play a crucial role in stabilizing the ferroelectric phase. Comparison with frozen-phonon calculati ...

2006

Broad-band dielectric response of PbMg1/3Nb2/3O3 relaxor ferroelectrics: Single crystals, ceramics and thin films

Nava Setter, Kyle Brinkman

2006

Piezoelectric anisotropy: Enhanced piezoelectric response along nonpolar directions in perovskite crystals

Dragan Damjanovic, Nava Setter, Marko Budimir, Matthew Davis

This paper discusses the mechanisms that can contribute to the enhanced longitudinal piezoelectric effect along nonpolar directions in perovskite crystals, such as BaTiO3, PbTiO3, KNbO3, Pb(Mg1/3Nb2/3)O-3-PbTiO3 and Pb(Zn1/2Nb2/3)O-3-PbTiO3. Piezoelectric ...

Kluwer Academic Publishers, Springer2006

Growth of single-crystalline KNbO3 nanostructures

László Forró, Nava Setter, Jin Won Seo, Arnaud Magrez

This communication reports on the growth of highly uniform KNbO3 nanowires exhibiting a narrow diameter distribution around 60 nm and a length-to-width ratio up to 100. The nanowires were prepared by a hydrothermal route, which enables simple, gram-scale p ...

2006

Ferroelectric film switching via oblique domain growth observed by cross-sectional nanoscale imaging

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Roman Gysel

2006

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