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In this paper, the reliability of tunable ferroelectric thin film capacitors has been addressed. The long term stability of tunable capacitors based on Ba0.3Sr0.7TiO3 films deposited by chemical solution deposition onto an alumina substrate was investigate ...

Non-volatile ferroelectric control of magnetic domains has been demonstrated in ultra-thin cobalt layers at room temperature. The sensitivity of magnetic anisotropy energy to the electronic structure in a few atomic layers adjacent to the interface allows ...

The effect of acceptor (Na, Mg, Fe) and donor (Nb,Ta) dopants on the switching properties of Pb(Zr0.53Ti0.47)O-3 (PZT) thin films with Pt electrodes was investigated for broad dopant concentration ranges. The effect of dopants on endurance was found to be characteristic to type of doping (donor or acceptor) and independent of individual dopant element, microstructural features, or site of doping. All acceptor dopants studied were found to strongly improve the endurance characteristics of PZT thin films. Inc

Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged ...

Ferroelectric orthorhombic lead metaniobate (PbNb2O6) is known to be metastable with respect to the thermodynamically stable nonferroelectric rhombohedral polymorph. The high-temperature tetragonal to low temperature rhombohedral phase transition is recons ...

The behavior of dielectric loss in SrTiO3 thin films at different microwave frequencies under the dc bias voltage applied is analyzed. Two types of differently processed SrTiO3 thin films (as deposited and oxygen-annealed) deposited by the pulse laser deposition technique onto MgO single crystal substrate are investigated. The half-wave microstrip resonator with the resonance frequencies being 8 and 16 GHz at the first and second resonance modes respectively was used for the microwave characterization of th

In this manuscript we report dielectric measurements of Mg and Li doped ZnO ceramics and thin films of various compositions. We have tried to reproduce the reported ferroelectriclike behavior in doped ZnO ceramics and thin films and observed anomalous diel ...

Fatigue phenomena occurring in Pb(ZrxTi1-x)O-3 ferroelectric thin-film capacitors (FECAP) with Pt electrodes are studied by means of conduction measurements in the cold-field-emission (tunneling) regime. We have determined that conduction in virgin FECAPs is controlled by tunneling at temperatures 100-140 K and electric fields (2.3-3.0 MV/cm). The Fowler-Nordheim equation successfully describes observed current-voltage relations for reasonable values of the semiconductor parameters of the system. Fatigue of

Diverse device applications for lead zirconate titanate (PZT) ceramics in thick-film form are currently in active development. In the present study, the particle dispersion properties of thick-film ink formulations containing PZT powder have been determined using rheological measurements. Although all of the eight commercially available dispersants tested are more effective than the terpineol solvent alone in decreasing attractive interparticle forces in suspensions, the best dispersant identified for hard

PZT (PbZrx Ti1-xO3) thin films have been locally grown by means of sol-gel deposition and local annealing on microhotplates. The microhotplates were based on a stress compensated Si3N4 /SiO2 membranes as structural elements and contained tantalum silicide filaments (Ta5Si3) for resistive heating. Above the filaments, a passivation layer of SiO2, an adhesion layer of Ti/TiO2 and a bottom electrode of Pt were deposited. Due to the low heat conductivity of the membrane, crystallization of the PZT film occurs e

An evidence that the dielectric aging in the polydomain Pb(Zr0.45Ti0.55)O-3 thin films is controlled by progressive pinning of 180 degrees domain walls is presented. To provide such a conclusion, we use a general method, which is based on the study of the ...

Crystal structure and dielectric properties of (1-x)Pb(Yb1/2Nb1/2)O-3-xPb(Sc1/2Nb1/2)O-3 (PYN1-xPSNx) (0less than or equal toxless than or equal to0.60) solid solution have been studied, and its pseudobinary phase diagram has been determined. The low-tempe ...

Long-term stability of high-and low-resistance states in full-organic ferroelectrically gated graphene transistors is an essential prerequisite for memory applications. Here, we demonstrate high retention performance for both memory states with fully satur ...

We reveal a strong elastic interaction between nonferroelastic domain walls in ferroelectric thin films. This interaction, having no analogue in bulk materials, is governed by elastic fields that are associated with the domain walls and extends to distance ...

Synchrotron X-ray diffraction (XRD) measurements of Pb-Ti-O fine acicular crystals (nanowires) of the so-called PX-phase have been performed. The theta-2 theta patterns of the nanowires dispersed on substrates with two different geometries indicated that t ...

Deposition of thin films via hydrothermal method has various advantages: low deposition temperature, high purity, deposition on a three-dimensional structure, and a large thickness. Although an epitaxial lead zirconate titanate (PZT) thin-film deposition has been reported, the ferroelectric measurement has not been conducted due to the peel-off morphology of the film. The current paper investigates the improvement of an epitaxial PZT thin film deposited via a hydrothermal method. By adjusting the position a

In this communication we address two issues essential for low-voltage memory applications of ferroelectric thin films: the size effect on polarization switching, and polarization fatigue. According to the proposed concept, both of these phenomena are controlled by local injection of charge into the interfacial layers of the ferroelectric film. In the experimental part of this work, we show that the entrapped charge relaxation can be enhanced by introducing a thin RuO2 layer into the top interface of the Pt/

The nucleation, growth, and orientation of lead zirconate titanate thin films prepared from organometallic precursor solutions by spin coating on (111) oriented platinum substrates and crystallized by rapid thermal annealing was investigated. The effects of pyrolysis temperature, post-pyrolysis thermal treatments, and excess lead addition are reported. The use of post-pyrolysis oxygen anneals at temperatures in the regime of 350-450 degrees C was found to strongly affect the kinetics of subsequent amorphous

We report on a novel gas spectrometry technique using pyroelectric thin-him arrays. The 1 x 50 element arrays of PZT are integrated onto silicon using a membrane structure. The experimental characterization of the pyroelectric elements shows both high voltage and current responses in defined frequency ranges. Mounting the array as a detector in a commercial spectrometer, we demonstrate its capability of detecting the infrared absorption curves of gases by the example of CO2. (C) 1998 Elsevier Science S.A. A

Role of Pt and SRO electrodes in polarization fatigue of PLZT film ferroelectric capacitors is studied. We show that asymmetrical Pt/SRO/PLZT/Pt structure exhibits unusual dependence of the endurance of switching polarization on the driving ac electric field amplitude. Specifically, for high ac electric field amplitude it shows a good switching endurance similar to SRO/PLZT/SRO capacitors, whereas for amplitude lower than 80 kV/cm a pronounced polarization fatigue similar to that of conventional Pt/PLZT/Pt

Nava Setter

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Reliability study of tunable ferroelectric capacitors

Ferroelectric control of magnetic domains in ultra-thin cobalt layers

Acceptor dopant effects on endurance of PZT thin films

Controlled creation and displacement of charged domain walls in ferroelectric thin films

Solid Solutions of Lead Metaniobate-Stabilization of the Ferroelectric Polymorph and the Effect on the Lattice Parameters, Dielectric, Ferroelectric, and Piezoelectric Properties

Intrinsic and extrinsic loss contributions in SrTiO3 thin films at microwave frequencies

Anomalous dielectric peak in Mg and Li doped ZnO ceramics and thin films

Cold-field-emission test of the fatigued state of Pb(ZrxTi1-x)O-3 films

Lead zirconate titanate particle dispersion in thick-film ink formulations

Local growth of sol-gel films by means of microhotplates

Evidence for dielectric aging due to progressive 180 degrees domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O-3 thin films

Phase diagram of pseudobinary Pb(Yb1/2Nb1/2)O-3-Pb(Sc1/2Nb1/2)O-3 ceramic solid solution

Long-term retention in organic ferroelectric-graphene memories

Elastic Coupling between Nonferroelastic Domain Walls

Synchrotron X-ray diffraction study on a single nanowire of PX-phase lead titanate

Ferroelectric property of an epitaxial lead zirconate titanate thin film deposited by a hydrothermal method

Downscaling of Pb(Zr,Ti)O-3 film thickness for low-voltage ferroelectric capacitors: Effect of charge relaxation at the interfaces

Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrates

Gas spectrometry based on pyroelectric thin-film arrays integrated on silicon

Degradation of asymmetrical Pt/SRO/PLZT/Pt capacitors: Role of Pt and oxide electrodes