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Nava Setter

Cette personne a quitté l’EPFL

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Publications associées (192)

Page 2 sur 10

Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN/GaN heterostructures

Nava Setter, Paul Muralt, Igor Stolichnov, Lisa Malin

The concept of a field-effect transistor with ferroelectric gate has been implemented using the GaN/AlGaN heterostructure combined with Pb(Zr,Ti)O-3 ferroelectric layer. The processing conditions were optimized in a way to obtain textured Pb(Zr,Ti)O-3 film ...

2006

Low-Symmetry Phases in Ferroelectric Nanowires

Nava Setter

Ferroelectric nanostructures have recently attracted much attention due to the quest of miniaturizing devices and discovering novel phenomena. In particular, studies conducted on two-dimensional and zero-dimensional ferroelectrics have revealed original pr ...

American Chemical Society (ACS)2010

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Mihai Adrian Ionescu, Nava Setter, Didier Bouvet, Igor Stolichnov, Sebastian Riester, Roman Gysel, Giovanni Antonio Salvatore

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

2008

Influence of flexoelectric coupling on domain patterns in ferroelectrics

Alexander Tagantsev, Nava Setter, Petr Yudin

Using Ginzburg-Landau theory and two-dimensional (2D) phase field simulations, we analyze the influence of flexoelectric coupling on the domain patterns in ferroelectrics. The phase field simulations predict that a high strength of the flexoelectric coupli ...

American Physical Society2014

Post-deposition control of ferroelastic stripe domains and internal electric field by thermal treatment

Nava Setter, Silviu Cosmin Sandu, Ludwig Feigl, Monika Iwanowska

The dependence of the formation of ferroelastic stripe domain patterns on the thermal history is investigated by detailed piezoresponse force microscopy and X-ray diffraction experiments after and during annealing of tensile strained tetragonal Pb(Ti,Zr)O- ...

American Institute of Physics2015

Piezoelectric micromachined ultrasonic transducers based on PZT thin films

Nava Setter, Paul Muralt, Nicolas Ledermann

This paper describes fabrication and characterization results of piezoelectric micromachined ultrasonic transducers (pMUTs) based on 2-mu m-thick Pb(Zr0.53Ti0.47O3) (PZT) thin films. The applied structures are circular plates held at four bridges, thus par ...

2005

Cold-Field Switching in PVDF-TrFE Ferroelectric Polymer Nanomesas

Alexander Tagantsev, Nava Setter, Igor Stolichnov

Polarization reversal in ferroelectric nanomesas of polyvinylidene fluoride with trifluoroethylene has been probed by ultrahigh vacuum piezoresponse force microscopy in a wide temperature range from 89 to 326 K. In dramatic contrast to the macroscopic data ...

American Physical Society2012

Strain Engineering of Electrical Conductivity in Epitaxial Thin Ba0.7Sr0.3TiO3 Film Heterostructures

Nava Setter, Barbara Maraston Fraygola, Sarunas Bagdzevicius

Thin epitaxial films have a great potential to be used in real life applications, such as oxide-on-silicon. However, they often contain a large amount of defects, leading to an enhanced electrical conductivity. This could be desirable in some applications ...

Lithuanian Physical Soc2016

Controlled stripes of ultrafine ferroelectric domains

Alexander Tagantsev, Nava Setter, Igor Stolichnov, Silviu Cosmin Sandu, Tomas Sluka, Ludwig Feigl, Petr Yudin, Konstantin Shapovalov, Mahamudu Mtebwa

In the pursuit of ferroic-based (nano) electronics, it is essential to minutely control domain patterns and domain switching. The ability to control domain width, orientation and position is a prerequisite for circuitry based on fine domains. Here, we deve ...

Nature Publishing Group2014

Structural complexity of (Na0.5Bi0.5)TiO3-BaTiO3 as revealed by Raman spectroscopy

Nava Setter, Dragan Damjanovic, Naama Klein

The structural phase diagram of the Pb-free ferroelectric (Na1/2Bi1/2)1−xBaxTiO3, x

2010

Electric-field-, temperature-, and stress-induced phase transitions in relaxor ferroelectric single crystals

Nava Setter, Dragan Damjanovic, Matthew Davis

Electric-field-induced phase transitions have been evidenced by macroscopic strain measurements at temperatures between 25 degrees C and 100 degrees C in 001-poled (1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) [(PMN-xPT);x=0.25,0.305,0.31] and (1-x)Pb(Zn1/3Nb2/3)O ...

2006

Defect ordering and defect-domain-wall interactions in PbTiO3: A first-principles study

Nava Setter, Nicola Marzari, Dragan Damjanovic, Anand Chandrasekaran

The properties of ferroelectric materials, such as lead zirconate titanate (PZT), are heavily influenced by the interaction of defects with domain walls. These defects are either intrinsic or are induced by the addition of dopants. We study here PbTiO3 (th ...

Amer Physical Soc2013

Ferroelectric-dielectric tunable composites

Nava Setter, Alexander Tagantsev

The dielectric response of ferroelectric-dielectric composites is theoretically addressed. Dielectric permittivity, tunability (relative change of the permittivity driven by dc electric field), and loss tangent are evaluated for various composite models. T ...

2006

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Mihai Adrian Ionescu, Nava Setter, Alexander Tagantsev, Didier Bouvet, Igor Stolichnov, Sebastian Riester, Roman Gysel, Giovanni Antonio Salvatore

A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n- type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable a ...

AIP American Institute of Physics2009

Correlation between dielectric anisotropy and positive or zero transverse piezoelectric coefficients in perovskite ferroelectric single crystals

Nava Setter, Dragan Damjanovic, Matthew Davis

The transverse piezoelectric coefficient (d(31)(star)) has been calculated for tetragonal barium titanate (BT) and lead titanate (PT) cut along nonpolar axes, over a range of temperatures, using the phenomenological Landau-Ginzburg-Devonshire theory. It is ...

2005

Moving antiphase boundaries using an external electric field

Alexander Tagantsev, Nava Setter, Petr Yudin, Konstantin Shapovalov, Kaushik Vaideeswaran

Antiphase boundaries (APBs) are unique domain walls that may demonstrate switchable polarization in otherwise non-ferroelectric materials such as SrTiO3 and PbZrO3. The current study explores the possibility of displacing such domain walls at the nanoscale ...

Amer Inst Physics2015

Analysis of composition homogeneity and polarization orientation of PZT submicron fibers by micro-Raman spectroscopy

Nava Setter, Silviu Cosmin Sandu, Jin Wang

Micro-Raman spectroscopy is a convenient tool to probe individual objects with a feature size on the submicron scale. The phase, composition, and orientation of Pb(Zr,Ti)O-3 fibers fabricated via hydrothermal processing have been characterized by this tech ...

Elsevier Sci Ltd2014

Microscopic aspects of the region-by-region polarization reversal kinetics of polycrystalline ferroelectric Pb(Zr,Ti)O-3 films

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Enrico Colla, Lisa Malin

The region-by-region polarization switching in ferroelectric Pb(Zr,Ti)O-3 thin films sandwiched between Pt electrodes has been directly observed using piezoelectric scanning probe microscopy. A resolution improved by one order-of-magnitude compared to the ...

2005

Polarization Reversal in BiFeO3 Capacitors: Complex Behavior Revealed by PFM

Nava Setter, Paul Muralt, Alexander Tagantsev, Igor Stolichnov, Enrico Colla, Monika Iwanowska

Polarization reversal in BiFeO3 (BFO) thin films in a parallel-plate capacitor configuration has been explored using piezo-force microscopy (PFM). Through-electrode mapping of the local piezoresponse allows for direct observation of the domain growth, whic ...

2011

Ferroelectric Gate on AlGaN/GaN Heterostructures

Nava Setter, Paul Muralt, Igor Stolichnov, Lisa Malin

A PZT, Pb(Zr,Ti)O-3 (40:60), ferroelectric layer has been successfully deposited onto a Al0.3Ga0.7N/GaN heterostructure with a 2DEG, two dimensional electron gas. Due to the chemical and temperature stability of AlGaN/GaN it was possible to implement the c ...

IEEE2007