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Nava Setter

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Publications associées (194)

Free-Carrier-Compensated Charged Domain Walls Produced with Super-Bandgap Illumination in Insulating Ferroelectrics

Dragan Damjanovic, Nava Setter, Alexander Tagantsev, Tomas Sluka, Petr Bednyakov

Charged domain walls in ferroelectrics are movable and electronically conducting interfaces inside insulating materials. A simple and reliable method for their artificial production with ultraviolet (UV) light is described. The UV illumination produces fre ...

Wiley-Blackwell2016

Velocity Control of 180 degrees Domain Walls in Ferroelectric Thin Films by Electrode Modification

Nava Setter, Alexander Tagantsev, Tomas Sluka, Petr Yudin, Ludwig Feigl

The velocity of individual 1800 domain walls in thin ferroelectric films of PbZr0.1Ti0.9O3 is strongly dependent on the thickness of the top Pt electrode made by electron-beam induced deposition (EBID). We show that when the thickness is varied in the rang ...

Amer Chemical Soc2016

Thickness Dependence of Domain-Wall Patterns in BiFeO3 Thin Films

Nava Setter, Silviu Cosmin Sandu, Tomas Sluka, Arnaud Robert André Crassous

Unique properties of domain walls in ferroelectrics have been recently discovered but methods of their controlled engineering remain underdeveloped. Here we investigate the domain structure of Bi0.9La0.1FeO3 epitaxial thin films with piezoelectric force mi ...

Taylor & Francis2015

Anomalously thick domain walls in ferroelectrics (vol 91, 060102, 2015)

Nava Setter, Alexander Tagantsev, Maxim Gureev, Tomas Sluka, Petr Yudin

Amer Physical Soc2015

Room temperature concurrent formation of ultra-dense arrays of ferroelectric domain walls

Nava Setter, Alexander Tagantsev, Mahamudu Mtebwa, Petr Yudin, Ludwig Feigl, Konstantin Shapovalov

Properties of ferroelectric domain walls are attractive for future nano- and optoelectronics. An important element is the potential to electrically erase/rewrite domain walls inside working devices. Dense domain wall patterns, formed upon cooling through t ...

American Institute of Physics2015

Quantum properties of charged ferroelectric domain walls

Nava Setter, Alexander Tagantsev

We consider the properties of charged domain walls in ferroelectrics as a quantum problem. This includes determination of self-consistent attracting 1D potential for compensating charge carriers, the number and positions of discrete energy levels in this p ...

Amer Physical Soc2015

Polarity of translation boundaries in antiferroelectric PbZrO3

Nava Setter, Xiankui Wei

The polarity of translation boundaries (TBs) in antiferroelectric PbZrO3 is investigated. We show that previous experimentally reported polar property of RIII-1 type TB can be well approximated by a strain-free rigid model. Based on this, the modeling inve ...

Pergamon-Elsevier Science Ltd2015

Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels

Nava Setter, Alexander Tagantsev, Enrico Colla, Igor Stolichnov, Tomas Sluka, Petr Yudin, Ludwig Feigl, Xiankui Wei, Arnaud Robert André Crassous, Konstantin Shapovalov

Use of ferroelectric domain-walls in future electronics requires that they are stable, rewritable conducting channels. Here we demonstrate nontherrnally activated metallic-like conduction in nominally uncharged, bent, rewritable ferroelectric-ferroelastic ...

Amer Chemical Soc2015

Effective-surface-energy approach for size effects in ferroics

Nava Setter, Alexander Tagantsev, Jin Wang

We present a simple approach enabling analytical treatments of size effects in ferroelectric samples of complicated shapes for the cases where long-range depolarizing effects are not involved. The key element of the approach is the presentation of the ener ...

American Physical Society2015

Negative-pressure-induced enhancement in a freestanding ferroelectric

Nava Setter, Alexander Tagantsev, Marco Cantoni, Brahim Dkhil, Silviu Cosmin Sandu, Jin Wang, Tomas Sluka, Alexander Kvasov, Xiankui Wei

Ferroelectrics are widespread in technology(1), being used in electronics and communications(2), medical diagnostics and industrial automation. However, extension of their operational temperature range and useful properties is desired(3-5). Recent developm ...

Nature Publishing Group2015

Anomalously thick domain walls in ferroelectrics

Nava Setter, Alexander Tagantsev, Maxim Gureev, Tomas Sluka, Petr Yudin

Using the Landau theory we demonstrate the possibility of unusual, anomalously thick ferroelectric domain walls, where the order parameter rotates with a nearly constant modulus as in ferromagnets. The effect occurs in 90 degrees charged domain walls and i ...

Amer Physical Soc2015

Non-volatile polarization switch of magnetic domain wall velocity

Nava Setter, Igor Stolichnov, Zhouji Huang

Controlled propagation speed of individual magnetic domains in metal channels at the room temperature is obtained via the non-volatile field effect associated with the switchable polarization of P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) ferro ...

Amer Inst Physics2015

Moving antiphase boundaries using an external electric field

Nava Setter, Alexander Tagantsev, Kaushik Vaideeswaran, Petr Yudin, Konstantin Shapovalov

Antiphase boundaries (APBs) are unique domain walls that may demonstrate switchable polarization in otherwise non-ferroelectric materials such as SrTiO3 and PbZrO3. The current study explores the possibility of displacing such domain walls at the nanoscale ...

Amer Inst Physics2015

Polarization Switching and Domain Wall Motion in Circular and Ring Capacitor Structures in PZT Thin Films

Nava Setter, Ludwig Feigl

Ferroelectric switching in circular and ring capacitors has been performed using a stroboscopic mode of piezoresponse force microscopy. A simple geometric model incorporating the characteristic domain wall motion is sufficient to describe the switching of ...

Taylor & Francis2015

Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films

Nava Setter, Alexander Tagantsev, Tomas Sluka, Arnaud Robert André Crassous

Impurity elements used as dopants are essential to semiconductor technology for controlling the concentration of charge carriers. Their location in the semiconductor crystal is determined during the fabrication process and remains fixed. However, another p ...

Nature Publishing Group2015

Post-deposition control of ferroelastic stripe domains and internal electric field by thermal treatment

Nava Setter, Silviu Cosmin Sandu, Monika Iwanowska, Ludwig Feigl

The dependence of the formation of ferroelastic stripe domain patterns on the thermal history is investigated by detailed piezoresponse force microscopy and X-ray diffraction experiments after and during annealing of tensile strained tetragonal Pb(Ti,Zr)O- ...

American Institute of Physics2015

Formation of charged ferroelectric domain walls with controlled periodicity

Dragan Damjanovic, Nava Setter, Alexander Tagantsev, Tomas Sluka, Petr Bednyakov

Charged domain walls in proper ferroelectrics were shown recently to possess metallic-like conductivity. Unlike conventional heterointerfaces, these walls can be displaced inside a dielectric by an electric field, which is of interest for future electronic ...

Nature Publishing Group2015

Controlling domain wall motion in ferroelectric thin films

Nava Setter, Alexander Tagantsev, Petr Yudin, Ludwig Feigl

Domain walls in ferroic materials have attracted significant interest in recent years, in particular because of the unique properties that can be found in their vicinity(1-3). However, to fully harness their potential as nanoscale functional entities(4,5), ...

Nature Publishing Group2015

Ferroelectric translational antiphase boundaries in nonpolar materials

Nava Setter, Alexander Tagantsev, Alexander Kvasov, Xiankui Wei

Ferroelectric materials are heavily used in electro-mechanics and electronics. Inside the ferroelectric, domain walls separate regions in which the spontaneous polarization is differently oriented. Properties of ferroelectric domain walls can differ from t ...

Nature Research2014

Lattice dynamics and antiferroelectricity in PbZrO3 tested by x-ray and Brillouin light scattering

Nava Setter, Alexander Tagantsev, Kaushik Vaideeswaran

We report the results of a comprehensive study of the critical dynamics of the classical perovskite antiferroelectric PbZrO3. The combination of inelastic x-ray and diffuse x-ray scattering techniques and Brillouin light scattering was used. It is found th ...

American Physical Society2014

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