Publications de Alok Rudra | EPFL Graph Search

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The indium desorption rates from InGaAs and InAlAs grown on InP substrates have been measured by wedge transmission electron microscopy as a function of the growth temperature. Desorption becomes significant at 545-degrees-C for both materials. No automatching effects could be observed under the growth conditions of the experiment. The bandgap of In(y)Al1-yAs has been measured at 77 K as a function of the indium content. The composition and the strain have been measured by four-crystal high resolution X-ray

Based on site- and energy-controlled quantum wires (QWR) and quantum dots (QD), diverse photonic-crystal microcavity laser systems are proposed and discussed. Results demonstrating QWR lasing, cavity coupling and QD ordered arrays are presented.

Exciton transfer between two parallel GaAs V-groove quantum wires (QWRs) or two planar quantum wells (QWs) separated by AlGaAs barriers ranging from 5.5 nm to 20 nm thickness is studied by photoluminescence (PL) and PL excitation (PLE) spectroscopy. It is found that the transfer is strongly reduced between the widely spaced QWRs as compared with QWs. We have also investigated the optical absorption in single QWRs embedded in an AlGaAs V-shaped channel waveguide. Using a combination of PLE and absorption mea

Using site-controlled semiconductor quantum dots (QDs) free of multiexcitonic continuum states, integrated with photonic crystal membrane cavities, we clarify the effects of pure dephasing and phonon scattering on exciton-cavity coupling in the weak-coupli ...

Significant reduction in inhomogeneous broadening of GaAs/AlGaAs V- groove quantum wires (QWRs) is achieved by growing them on vicinal (001) GaAs substrates misaligned by several degrees with respect to the [1 (1) over bar0] groove direction. Low temperatu ...

This document contains all the data and the details of the analysis used in the manuscript titled " Control of Ge island coalescence for the formation of nanowires on silicon." https://doi.org/10.1039/D3NH00573A ...

High spontaneous-emission coupling and low-threshold lasing is achieved in semiconductor photonic-crystal cavities using short quantum wires. Lasing is established and characterized based on the linewidth narrowing and time-resolved photon dynamics. (C)2009 Optical Society of America

Low-threshold lasing is experimentally achieved for the first time in semiconductor photonic-crystal nanocavities embedding site-controlled quantum wires. The effect is established via direct observation of the stimulated emission in the time domain.

A thin InAs layer grown in a quasi-two-dimensional film over InP reorganizes into islands if left to anneal under arsine. This surface transformation is inhibited at lower arsine fluxes. With increasing temperature, the surface transformation is activated as long as the effective arsine coverage is sufficient.

Exciton and cavity mode (CM) dynamics in site-controlled pyramidal quantum dots (QDs), integrated with linear photonic crystal membrane cavities, are investigated for a range of temperatures and photo-excitation power levels. The absence of spurious multi- ...

Site-controlled quantum-wire photonic-crystal microcavity laser is experimentally demonstrated using optical pumping. The single-mode lasing and threshold are established based on the transient laser response, linewidth narrowing, and the details of the no ...

Exciton recombination dynamics in tailored-potential, site-controlled AlGaAs quantum wires (QWRs) are studied. Time-resolved photoluminescence spectra evidence exciton localization in weakly disordered "uniform" QWRs, whereas deterministic bandgap grading ...

This document contains all the raw data files used for the manuscript. ...

We demonstrate the on-chip photon routing on a site-controlled quantum dots embedded W1 photonic crystal waveguides side coupled to a L3 cavity. Observed photon propagation through the device indicates the connectivity of all photonic elements. ...

Alok Rudra

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Characterization of InGaAs and InAlAs layers on InP by four-crystal high resolution X-ray diffraction and wedge transmission electron microscopy

Site-Controlled Quantum-Wire and Quantum-Dot Photonic-Crystal Microcavity Lasers

Semiconductor quantum-wires and nano-wires for optoelectronic applications

Effect of Pure Dephasing and Phonon Scattering on the Coupling of Semiconductor Quantum Dots to Optical Cavities

Narrow inhomogeneous broadening of V-groove quantum wires grown on vicinal substrates

3.125Gb/s modulation up to 70°C using 1.3µm VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications

Strongly reduced exciton transfer between quantum wires

Data set for control of Ge island coalescence for the formation of nanowires on silicon

Short (similar to 1 mu m) Quantum-Wire Single-Mode Photonic-Crystal Microcavity Laser

Observation of Stimulated Emission and Lasing in Quantum-wire Photonic-crystal Nanocavities

Luttinger-liquid behavior in weakly disordered quantum wires

Influence of long-range substrate roughness in V-groove quantum wire structures

Dynamics of island formation in the growth of InAs/InP quantum wells

Exciton dynamics in a site-controlled quantum dot coupled to a photonic crystal cavity

Photonic-crystal microcavity laser with site-controlled quantum-wire active medium

High-Performance Single-Mode VCSELs in the 1310-nm Waveband

Exciton localization and drift in tailored-potential quantum nanowires

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks

Site-Controlled Quantum Dots Coupled to Photonic Crystal Cavities and Waveguides

Site-controlled QD embedded coupled photonic crystal cavity waveguides for on-chip photon routing