Jean-François Carlin

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We present the simultaneous optical and thermal analysis of a freestanding photonic semiconductor membrane made from wurtzite III-nitride material. By linking microphotoluminescence spectroscopy with Raman thermometry and other spectroscopic techniques, we ...

We present a methodology to quantify polarization and electron affinity changes at interfaces by combining scanning tunneling spectroscopy, off-axis electron holography in transmission electron microscopy (TEM), and self-consistent calculations of the elec ...

The role of deep defects and their physical origin in InGaN/GaN LED are still widely investigated and debated, in particular their impact on the electrical and optical characteristics and on the reliability of the device. In this paper we evaluate the elec ...

We report the observation of well-resolved A and B excitonic resonances in the reflectivity spectra of a wedged GaN/AlGaN quantum well (QW) with 5% Al content in the barriers for different well thicknesses. For the thicker well cases, the energy splitting ...

It is observed experimentally that high electron mobility transistor devices with short channel length processed from nitride AlInN/AlN/GaN heterostructures containing 2D electron gases (2DEGs) with densities beyond 2 x 10(13) cm(-2) exhibit temperatures u ...

Electrochemistry and biochemistry have always been ideal applications for diamond due to its chemical inertness and stability, sensitivity and biocompatibility. Several diamond ChemFET concepts have been proposed to date, however further improvements are s ...

The engineering of aluminum nitride (AlN) waveguides allows for broad supercontinuum generation (SCG) within its wide transparency window (200 nm - 5.5 μm) enabling applications in precision spectroscopy and metrology fields. An efficient coverage from 500 to 3500 nm was shown by pumping crystalline AlN waveguides with a femtosecond laser centered at 1560 nm [1]. UV and visible coverage was reached by pumping around 800 nm and by chirping the waveguide [2] or by exploiting the modal dispersion of higher-ord

We report on the epitaxial growth of high-quality core-shell nonpolar m-plane GaN/InAlN multiple quantum wells (MQWs) on the sidewall facets of c-oriented hexagonal GaN wires. Pseudomorphic growth without generation of threading dislocations has been estab ...

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, ...

Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonator ...

We report broad bandwidth blue superluminescent light-emitting diodes (SLEDs) based on a short-cavity active region. The dependencies of amplified spontaneous emission (ASE) output power and gain bandwidth on cavity length were investigated in devices whos ...

The electrical properties, electroluminescence (EL) power output and deep trap spectra were studied before and after 5 MeV electron irradiation of near-UV single-quantum-well (SQW) light-emitting diodes (LED) structures differing by the presence or absence ...

Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GaN superlattice (SL) were examined. The InAlN-based ULs were previously sho ...

The growth of highly-reflective nitride-based distributed Bragg reflectors (DBRs) and their use in vertical cavity structures is reviewed. We discuss the various nitride material systems employed to design Bragg mirrors and microcavities, namely the Al-x(G ...

Grown on a (111) high-resistivity silicon substrate, 0.1-mu m gate AlInN/GaN high-electron mobility transistors (HEMTs) achieve a maximum current density of 1.3 A/mm, an extrinsic transconductance of 330 mS/mm, and a peak current gain cutoff frequency as h ...

The influence of pulsed helium plasma irradiation, with a 10 μs duration and a surface energy load of 0.2 MJ m – 2, on the elemental and phase composition, surface morphology and crystal structure of thin-film heterosystems based on CdS/CdTe was studied. T ...

We address degradation aspects of lattice-matched unpassivated InAlN/GaN high-electron-mobility transistors (HEMTs). Stress conditions include an off-state stress, a semi-on stress (with a partially opened channel), and a negative gate bias stress (with so ...

Defects can significantly modify the electro-optical characteristics of InGaN light-emitting diodes (LEDs); however, modeling the impact of defects on the electrical characteristics of LEDs is not straightforward. In this paper, we present an extensive inv ...

Crack-free lattice-matched Al0.85In0.15N/GaN heterostructures were grown on sapphire substrates with barrier thicknesses up to 100 nm which exhibit very high polarization-induced electron sheet density (>2.5 x 10(13) cm(-2)) located at the heterointerface. ...

The growth of InGaN quantum wells ( QWs) by metal-organic vapour phase epitaxy is investigated by atomic force microscopy ( AFM). It is shown that for low growth temperatures the surface morphology of the thin InGaN well layer ( 1.5 nm) exhibits a meanderi ...

Jean-François Carlin

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Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry

Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well

Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

Combining diamond electrodes with GaN heterostructures for harsh environment ISFETs

Extending the Supercontinuum Spectrum in Fully Etched Thick Aluminum Nitride Waveguides

M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells

Broadened Bandwidth Amplified Spontaneous Emission from Blue GaN-Based Short-Cavity Superluminescent Light-Emitting Diodes

Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Recent progress in the growth of highly reflective nitride-based distributed Bragg reflectors and their use in microcavities

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

Influence of Microsecond Pulse Helium Plasma Flow on the Surface Morphology and Crystal Structure of the Photovoltaic Converters Based on CdS/CdTe

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Growth mode induced carrier localization in InGaN/GaN quantum wells