Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-silicon solar cells. Their realization and integration into a convenient process flow have become crucial research objectives. Here, we report an alternative pas ...

2018

Crystalline Silicon Solar Cells With Coannealed Electron- and Hole-Selective SiCx Passivating Contacts

Christophe Ballif, Quentin Thomas Jeangros, Philippe Wyss, Franz-Josef Haug, Monica Morales Masis, Gizem Nogay, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger, Oscar Esteban Rucavado Leandro, Andrea Ingenito

We present electron- and hole-selective passivating contacts based on wet-chemically grown interfacial SiOx and overlying in-situ doped silicon carbide (SiCx) deposited by plasma-enhanced chemical vapor deposition. After annealing at 850 degrees C, excelle ...

2018

Quantifying and Modeling the Impact of Interconnection Failures on the Electrical Performance of Crystalline Silicon Photovoltaic Modules

Christophe Ballif, Antonin Faes, Jacques Levrat, Matthieu Despeisse, Eleonora Annigoni, Alessandro Francesco Aldo Virtuani

We present an electrical model developed with LT SPICE that simulates the performance of a string of cells with disconnections in the electrical circuit. In a previous contribution, we quantified experimentally how the module performance is affected when o ...

IEEE2018

Numerical Simulation of Temperature Dependence of MoOx Based SHJ Solar Cell

Christophe Ballif, Philipp Friedrich Hermann Löper, Stephanie Essig

Transition metal oxides based high efficiency silicon heterojunction (SHJ) solar cells have emerged as promising candidate due to their low manufacturing cost and avoidance of poisonous dopant gases. Temperature dependent J V curves in such solar cells cou ...

AMER INST PHYSICS2018

A passivating contact concept compatible with a short thermal treatment

Christophe Ballif, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Gizem Nogay, Josua Andreas Stückelberger, Andrea Ingenito

In this study we present a boron-doped silicon carbide layers as a hole-selective contact which is compatible with short annealing time (typically < 1 minute) as the one used for firing of metal pastes. The application of such layers on symmetrically proce ...

IEEE2018

Interdigitated back contact silicon heterojunction solar cells featuring an interband tunnel junction enabling simplified processing

Christophe Ballif, Antoine Descoeudres, Nicolas Badel, Benjamin Strahm, Antonin Faes, Sylvain Nicolay, Quentin Thomas Jeangros, Gabriel Christmann, Stefaan De Wolf, Matthieu Despeisse, Loris Barraud, Jonas Geissbühler, Johannes Peter Seif, Andrea Tomasi, Bertrand Yves Paul Paviet-Salomon

This paper reports on the development of an innovative back-contacted crystalline silicon solar cell with passivating contacts featuring an interband tunnel junction at its electron-collecting contacts. In this novel architecture, named "tunnel-IBC", both ...

2018

Thermo-mechanical stability of lightweight glass-free photovoltaic modules based on a composite substrate

Christophe Ballif, Valentin Chapuis, Hengyu Li, Laure-Emmanuelle Perret Aebi, Ana Cristina Oliveira Martins, Alessandro Francesco Aldo Virtuani

Lightweight PV modules are attractive for building-integrated photovoltaic (BIPV) applications, especially for renovated buildings, where the additional load bearing capacity is limited. This work focuses on the development of a lightweight, glass-free pho ...

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