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Concept

Résistance-transistor

Publications associées (30)

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

A 3.3-Gb/s SPAD-Based Quantum Random Number Generator

Edoardo Charbon, Francesco Gramuglia, Pouyan Keshavarzian

Quantum random number generators (QRNGs) are a burgeoning technology used for a variety of applications, including modern security and encryption systems. Typical methods exploit an entropy source combined with an extraction or bit generation circuit in or ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Matteo Cucchi

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

WILEY-V C H VERLAG GMBH2023

Energy Efficient Sensing using Steep Slope Devices

Teodor Rosca

Today, we are witnessing the Internet of Things (IoT) revolution, which facilitates and improves our lives in many aspects, but comes with several challenges related to the technology deployment at large scales. Handling ever growing amounts of information ...

EPFL2022

Utilizing XMG-based Synthesis to Preserve Self-Duality for RFET-Based Circuits

Giovanni De Micheli, Heinz Riener, Alessandro Tempia Calvino, Akash Kumar

Individual transistors based on emerging reconfigurable nanotechnologies exhibit electrical conduction for both types of charge carriers. These transistors (referred to as Reconfigurable Field-Effect Transistors (RFETs)) enable dynamic reconfiguration to d ...

2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

Improving First-Order Threshold Implementations of SKINNY

Subhadeep Banik, Andrea Felice Caforio, Daniel Patrick Collins, Ognjen Glamocanin

Threshold Implementations have become a popular generic technique to construct circuits resilient against power analysis attacks.In this paper, we look to devise efficient threshold circuits for the lightweight block cipher family SKINNY. The only threshol ...

Springer2021

A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications

Edoardo Charbon, Andrea Ruffino, Yatao Peng

A cryogenic broadband low noise amplifier (LNA) for quantum applications based on a standard 40-nm CMOS technology is reported. The LNA specifications are derived from the readout of semiconductor quantum bits at 4.2 K, whose quantum information signals ar ...

2021

Adaptive Body Biasing in Strong Body Factor Technologies

Thomas Christoph Müller

With the advent of intelligent sensor nodes in everyday life, low power aspects of system design become more and more important. Adaptive body biasing is a promising methodology to achieve dynamic adaptation of the tradeoff between performance and energy b ...

EPFL2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Teodor Rosca, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Eamon Patrick O'Connor

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

A cryo-CMOS chip that integrates silicon quantum dots and multiplexed dispersive readout electronics

Edoardo Charbon, Andrea Ruffino, Yatao Peng

An integrated circuit fabricated using industry-standard 40 nm complementary metal-oxide-semiconductor technology can combine silicon quantum devices, digital addressing and analogue multiplexed dispersive readout electronics. ...

NATURE PORTFOLIO2022

Random flip-flop: adding quantum randomness to digital circuits for improved cyber security, artificial intelligence and more

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic

Harnessing quantum randomness for the generation of random numbers is an important concept crucial for information security and many other computer-related applications. Quantum random number generators (QRNGs) are evolving from bulky, slow, and expensive ...

SPIE2021

Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera

Recent research has reported an undesirable OFF-state loss in high-frequency soft-switching power converters, such as resonant converters. This loss is attributed to a hysteresis loss related to the charging-discharging process of the output capacitance of ...

IEEE2021

Preserving Self-Duality During Logic Synthesis for Emerging Reconfigurable Nanotechnologies

Giovanni De Micheli, Heinz Riener, Akash Kumar

Emerging reconfigurable nanotechnologies allow the implementation of self-dual functions with a fewer number of transistors as compared to traditional CMOS technologies. To achieve better area results for Reconfigurable Field-Effect Transistors (RFET)-base ...

IEEE2021

2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope

Nicola Marzari, Davide Campi

Due to their remarkable properties, single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal di ...

AMER CHEMICAL SOC2020

Coss Loss Tangent of Field-Effect Transistors: Generalizing High-Frequency Soft-Switching Losses

Elison de Nazareth Matioli, Luca Nela, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Palliyage Srilak Nirmana Perera

The dissipated energy (Ediss) related to the resonant charging/discharging of a transistor output capacitance, becomes a dominant loss factor for power converters operating in the MHz range. A recent work has introduced a small-signal measurement method to ...

2020

Negative Resistance in Cascode Transistors

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Palliyage Srilak Nirmana Perera

Cascode topology which includes a high-voltage GaN and a low-voltage Si transistor is an attractive device concept, which uses the low ON-resistance of GaN while still being compatible with Si gate drivers. It demonstrates the highest threshold voltage amo ...

2020

Reducing the Multiplicative Complexity in Logic Networks for Cryptography and Security Applications

Giovanni De Micheli, Mathias Soeken, Eleonora Testa, Luca Gaetano Amarù

Reducing the number of AND gates plays a central role in many cryptography and security applications. We propose a logic synthesis algorithm and tool to minimize the number of AND gates in a logic network composed of AND, XOR, and inverter gates. Our appro ...

ASSOC COMPUTING MACHINERY2019

Measurement of Large-Signal Coss and Coss Losses of Transistors Based on Nonlinear Resonance

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera

In this letter, we present a new measurement technique to evaluate the large-signal output capacitance ( COSS ) of transistors as well as the COSS energy dissipation ( EDISS ), based on the nonlinear resonance between a known inductor and the output capaci ...

2019