Cryogenic HEMT-based devices and circuits for quantum computing
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2025
Résumé
In recent years, quantum computers have emerged as a disruptive technology capable of solving problems currently intractable for classical systems. Computation is performed using qubits, which exploit quantum properties like superposition and entanglement, and requires them to operate at cryogenic temperatures. As a result, quantum computers are built around cryostats that reach temperatures as low as \qty{10}{\milli\kelvin}. However, to deliver a significant advantage over conventional approaches, quantum computers must increase their qubit count, improve qubit quality, and adopt more sophisticated control and readout architectures. The integration of more complex or improved cryogenic electronics inside the cryostat can enhance the scalability of these systems, and is the topic of this thesis.
The primary technology platform used in this work is based on cryogenic InGaAs/InP high-electron-mobility transistors (HEMTs). One objective was the development of cryogenic circuits that enhance the scalability of spin-qubit quantum computers by enabling efficient signal delivery in control and readout paths. To this end, cryogenic multiplexers were demonstrated with threshold voltages as low as \qty{90}{\milli\volt}, subthreshold swing of \qty{5}{\milli\volt\per dec}, and on-off ratio of 107 at \qty{4}{\kelvin}. In addition, a charge-storage array was developed for the local generation of qubit bias signals, using an operation scheme based on pulse trains to program voltage levels on capacitors that can be placed in proximity to qubit gates.
A second objective was the fabrication of HEMTs with enhanced performance for use in cryogenic low-noise amplifiers, which are critical for qubit readout. Studies were performed to characterize self-heating, an effect that limits transistor performance at cryogenic temperatures. Moreover HEMTs with improved characteristics were fabricated, which achieved exceptional values in state-of-the-art metrics, including fT= \qty{622}{\giga\hertz}, fMAX= \qty{733}{\giga\hertz}, and a noise indication factor IDS/gm= \qty{0.17}{\sqrt{\volt \cdot \milli\meter / \siemens}} at \qty{4}{\kelvin}. These results represent a new record for the combination of high-frequency and low-noise performance in a cryogenic HEMT.
These results establish the InGaAs/InP HEMT technology as a promising platform for the development of cryogenic circuits, and demonstrate its versatility in addressing multiple applications requiring both single-device performance and integration at the circuit level.
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