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Concept

Contact ohmique

vignette|481x481px|Schéma de bandes du métal et du semi-conducteur en interaction où Φm

Source officielle

https://fr.wikipedia.org/wiki/Contact_ohmique

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Cours associés (8)

EE-557: Semiconductor devices I

This course aims to give a solid introduction to semiconductors, from Silicon to compound semiconductors, making the connection between the physics and their application in real life. We will explore several experimental techniques related to current semic ...

PHYS-433: Semiconductor physics and light-matter interaction

Lectures on the fundamental aspects of semiconductor physics and the main properties of the p-n junction that is at the heart of devices like LEDs & laser diodes. The last part deals with light-matter interaction phenomena in bulk semiconductors such as ab ...

MICRO-312: Physique des composants semiconducteurs

Les étudiants savent expliquer la physique des composants semiconducteurs, tels que diodes, transistors et composants MOS. Ils les utilisent dans des circuits électroniques fondamentaux tels qu'inverseurs et ampli. ...

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Séances de cours associées (21)

Jonction métal-semiconducteur: Physique Vue d'ensemble

Fournit une vue d'ensemble de la physique des jonctions métal-semiconducteur, y compris la fonction de travail, la barrière Schottky, les contacts Ohmic et les hétérojonctions.

Résistance de contact: Stratégies et mesures

Explore la résistance au contact, la résistance quantique, les techniques de mesure, les stratégies de réduction et les examens expérimentaux dans les matériaux 2D.

Propriétés de surface: Comprendre les semi-conducteurs et les nanomatériaux

Couvre l'importance des propriétés de surface dans les semi-conducteurs et les nanomatériaux, y compris l'énergie de surface, la reconstruction et les effets des états de surface sur le comportement électronique.

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vignette|481x481px|Schéma de bandes du métal et du semi-conducteur en interaction où Φm

Source officielle

https://fr.wikipedia.org/wiki/Contact_ohmique

À propos de ce résultat

Cours associés (8)

EE-557: Semiconductor devices I

PHYS-433: Semiconductor physics and light-matter interaction

MICRO-312: Physique des composants semiconducteurs

Afficher plus

Séances de cours associées (21)

Jonction métal-semiconducteur: Physique Vue d'ensemble

Fournit une vue d'ensemble de la physique des jonctions métal-semiconducteur, y compris la fonction de travail, la barrière Schottky, les contacts Ohmic et les hétérojonctions.

Résistance de contact: Stratégies et mesures

Explore la résistance au contact, la résistance quantique, les techniques de mesure, les stratégies de réduction et les examens expérimentaux dans les matériaux 2D.

Propriétés de surface: Comprendre les semi-conducteurs et les nanomatériaux

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Publications associées (32)

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Luca Massimiliano Antognini, Sofia Libraro, Audrey Marie Isabelle Morisset, Julien Hurni, Ezgi Genç

This work presents a study of p-type passivating contacts based on SiCx formed via a rapid thermal processing (RTP) step, using conditions compatible with the firing used to sinter screen-printed metallization pastes in industry. The contributions of the t ...

Elsevier2023

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Personnes associées (2)

Christophe Ballif

Christophe Ballif is director of the Phototovoltaics and Thin Film Electronics Laboratoryb) (PV-Lab at the institute of microengineering (IMT) in Neuchâtel (part of the EPFL since 2009). The lab focus is on the science and technology of high efficiency heterojunction crystalline cells,so-called passivating contacts for solar cells, multi-junction solar cells include novel generation Perovskite on innovative optical high speed detector and on various macroelectronics application. It also deals with energy management with a focus on integration of solar electricity into the energy system. The PV-Lab has strongly contributed to technology transfer and industrialization of novel devices and full technology with numerous companies. Christophe Ballif graduated as a physicist from the EPFL in 1994, where he also obtained in 1998 his Phd degree working on novel PV materials. He accomplished his postdoctoral research at NREL (Golden, US) on compound semiconductor solar cells (CIGS and CdTe). He worked then at the Fraunhofer ISE (Ge) on crystalline silicon photovoltaics (monocrystalline and multi-crystalline) until 2003 and then at the EMPA in Thun (CH) before becoming full professor at the University of Neuchâtel IMT in 2004, taking over the chair of Prof. A. Shah. Since 2013, C.Ballif is also the director of the new CSEM PV-Center, also located in Neuchâtel. The CSEM PV-Center is focussing more on industrialisation and technology transfer in the field of solar energy, including solar electricity management and storage. At the core of the CSEM PV-center activities lies several "pilot lines" for various kinds of solar cells manufacturing, with a focus coating technologies, wet chemistry processes for crystalline silicon, metalisation techniques for solar cells, and a platform for developing "ideal packaging solutions and polymers" for PV modules. In addition, joined facitilites between CSEM and EPFL of over 800 m2 are available for modules manufacturing, measuring and accelerated aging. CSEM PV-center has also full team dedicated to storage and energy systems and operates a joined center with BFH in Biel for research on electrochemical storage. He (co-) authored over 500 journal and technical papers, as well as several patents. He is an elected member of the SATW, member of the scientific council of the Swiss AEE, and member of the board of the EPFL Energy center. In 2016, he recieved the Becquerel prize for his contributions to the field of high efficiency photovoltaics.

Nicolas Grandjean

Nicolas Grandjean received a PhD degree in physics from the University ofNice Sophia Antipolis in 1994 and shortly thereafter joined the French National Center for Scientific Research (CNRS) as a permanent staff member. In 2004, he was appointed tenure-track assistant professor at the École polytechnique fédérale de Lausanne (EPFL) where he created the Laboratory for advanced semiconductors for photonics and electronics. He was promoted to full professor in 2009. He was the director of the Institute of Condensed Matter Physics from 2012 to 2016 and then moved to the University of California at Santa Barbara where he spent 6 months as a visiting professor. Since 2018, he is the head of the School of Physics at the EPFL. He was awarded the Sandoz Family Foundation Grant for Academic Promotion, received the “Nakamura Lecturer” Award in 2010, the "Quantum Devices Award” at the 2017 Compound Semiconductor Week, and “2016 best teacher” award from the EPFL Physics School. His research interests are focused on the physics of nanostructures and III-V nitride semiconductor quantum photonics.

Unités associées (7)

Laboratoire de magnétisme quantique

Chaire de simulation à l'échelle atomique

CIME - Gestion

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Concepts associés (7)

Metal–semiconductor junction

In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.

Transistor à effet de champ

Un transistor à effet de champ (en anglais, Field-effect transistor ou FET) est un dispositif semi-conducteur de la famille des transistors. Sa particularité est d'utiliser un champ électrique pour contrôler la forme et donc la conductivité d'un « canal » dans un matériau semiconducteur. Il concurrence le transistor bipolaire dans de nombreux domaines d'applications, tels que l'électronique numérique. Le premier brevet sur le transistor à effet de champ a été déposé en 1925 par Julius E. Lilienfeld.

Panneau photovoltaïque à concentration

Un panneau photovoltaïque à concentration, parfois simplement dénommé « panneau à concentration » est un module solaire photovoltaïque composé d'une série de dispositifs optiques de concentration de la lumière (lentilles ou miroirs) sur des cellules photovoltaïques (qui doivent être refroidies si le taux de concentration est élevé). Le composant le plus cher d'un module est - de loin - la cellule photovoltaïque.

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Personnes associées (2)

Christophe Ballif

Nicolas Grandjean