Invention of the integrated circuit

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Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts

Montserrat Fernandez-Bolanos Badia, Antonios Bazigos

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low-power digital electronics. This paper reports the demonstration of prototype circuits including the first 3-stage ring os ...

2014

Metal-coated silicon micropillars for freestanding 3D-electrode arrays in microchannels

Carlotta Guiducci, Samuel Kilchenmann, Elena Bianchi, Enrica Rollo

This paper presents a fabrication process for arrays of high-aspect-ratio micropillar electrodes, which are freestanding 3D structures that feature metal sidewalls connected to passivated planar wires. Facing vertical electrodes are considered to be a key ...

Elsevier2013

A Common Core Model for Junctionless Nanowires and Symmetric Double Gate FETs

Jean-Michel Sallese, Farzan Jazaeri, Lucian Barbut

In this brief, we evidence the link between planar and cylindrical junctionless FETs from the electrostatics point of view. In particular, we show that an approximate solution of the Poisson-Boltzmann equation for junctionless nanowires can be mapped on th ...

Institute of Electrical and Electronics Engineers2013

Single-layer MoS₂ : Electronics in Two Dimensions

Branimir Radisavljevic

This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...

EPFL2013

Process/Design Co-optimization of Regular Logic Tiles for Double-Gate Silicon Nanowire Transistors

Giovanni De Micheli, Yusuf Leblebici, Davide Sacchetto, Pierre-Emmanuel Julien Marc Gaillardon, Shashi Kanth Bobba, Jian Zhang, Michele De Marchi

Ambipolar transistors with on-line configurability to n-type and p-type polarity are desirable for future integrated circuits. Regular logic tiles have been recognized as an efficient layout fabric for ambipolar devices. In this work, we present a process/ ...

2012

Layout and Architecture Issues in Hall based CMOS microsystems

Pierre-André Farine, Pavel Kejik

The Hall cells intended for industrial applications are mainly produced in silicon integrated circuit technology. Recently, the increased use of other technologies, such as GaAs, InAs and InSb, have been reported. However, a single chip solution comprising ...

Czech Technical University in Prague, Faculty of Electrical Engineering2012

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis

Yusuf Leblebici, Alexandre Schmid, Davide Garetto

Complementary MOS device electrical performances are considerably affected by the degradation of the oxide lay- ers and Si/SiO2 interfaces. A general expression for electrically stressed MOS impedance has been derived and applied within the nonradiative mu ...

Institute of Electrical and Electronics Engineers2012

A programmable triangular neighborhood function for a Kohonen self-organizing map implemented on chip

Rafal Tomasz Dlugosz

An efficient transistor level implementation of a flexible, programmable Triangular Function (TF) that can be used as a Triangular Neighborhood Function (TNF) in ultra-low power, self-organizing maps (SOMs) realized as Application-Specific Integrated Circu ...

2012

Power Distribution Solutions for Large Hadron Collider Upgrades

In view of the Large Hadrons Collider experiments upgrade, where the inner front-end electronics will require higher supply power, a new power distribution scheme has to be designed. This thesis presents a new and more efficient scheme based on step-down D ...

EPFL2012

Polymer-electrolyte gated graphene transistors for analog and digital phase detection

Klaus Kern, Marko Burghard, Kannan Balasubramanian

We present an alternating current (ac) circuit based on a misoriented bilayer graphene device for analog and digital phase detection. We exploit the ambipolar nature of the transfer characteristics of a misoriented bilayer graphene transistor. The transist ...

AIP American Institute of Physics2011