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Concept

Bank switching

Publications associées (5)

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Ali Saeidi, Matteo Cavalieri, Teodor Rosca, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Luca Capua

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

Real-Time Personalized Atrial Fibrillation Prediction on Multi-Core Wearable Sensors

David Atienza Alonso, Amir Aminifar, Miguel Peon Quiros, Adriana Arza Valdes, Elisabetta De Giovanni

In the recent Internet-of-Things (IoT) era where biomedical applications require continuous monitoring of relevant data, edge computing keeps gaining more and more importance. These new architectures for edge computing include multi-core and parallel compu ...

2021

Highly Scalable Digital Silicon Photonic MEMS Switches

Niels Quack

Optical circuit switches with fast switching times can provide rapidly reconfigurable bandwidth in data center networks. Silicon photonic switches are attractive candidates with their fast response times and CMOS process compatibility. In this paper, we re ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Network-on-chip using request and reply trees for low-latency processor-memory communication

Babak Falsafi, Boris Robert Grot

A Network-On-Chip (NOC) organization comprises a die having a cache area and a core area, a plurality of core tiles arranged in the core area in a plurality of subsets, at least one cache memory bank arranged in the cache area, whereby the at least one cac ...

2014

Ferroelectric gate on AlGaN/GaN heterostructures

Lisa Malin

The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...

EPFL2007