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Publications associées (24)

Page 1 sur 2

Amorphous Silicon Based Microchannel Plates for Time-of-Flight Positron Emission Tomography

Samira Alexandra Frey

Microchannel plates fabricated from hydrogenated amorphous silicon (AMCPs) are a promising alternative to conventional lead glass microchannel plates. Their main advantages lie in their cheaper and more flexible fabrication processes, allowing for adaptabl ...

EPFL2023

Ultra-Low Power Short-Range 60-GHz FMCW Radar Front-End

Sammy Cerida Rengifo

The millimeter wave (mmWave) frequency band is becoming very interesting over the past years because it provides the opportunity to operate using large bandwidths which are not available at lower frequencies. This enables new communication standards suppor ...

EPFL2023

Nanoplasma-based Millimiter-wave Modulators on a Single Metal Layer

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

Fundamental constraints imposing power-frequency trade-offs in conventional electronics have stimulated research on alternative technologies for millimeter-wave and sub-millimeter-wave applications. In this work, we use the picosecond threshold firing of n ...

Institute of Electrical and Electronics Engineers2022

A Delta Sigma-Modulated Sample and Average Common-Mode Feedback Technique for Capacitively Coupled Amplifiers in a 192-nW Acoustic Analog Front-End

This work presents an acoustic analog front-end based on a delta sigma-modulated sample and average common-mode feedback technique. The proposed feedback offers a process and temperature stable high pass (HP) frequency corner, unity dc feedback gain, and a ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Measurements and analysis of different front-end configurations for monolithic SiGe BiCMOS pixel detectors for HEP applications

Edoardo Charbon

This paper presents a small-area monolithic pixel detector ASIC designed in 130 nm SiGe BiCMOS technology for the upgrade of the pre-shower detector of the FASER experiment at CERN. The purpose of this prototype is to study the integration of fast front-en ...

IOP Publishing Ltd2021

Blumino: The First Fully Integrated Analog SiPM With On-Chip Time Conversion

Edoardo Charbon, Andrei Ardelean, Emanuele Ripiccini, Andrada Alexandra Muntean, Esteban Venialgo Araujo

Blumino is the first analog silicon photomultiplier with integrated amplifier, comparator and time-to-digital converter (TDC). The combination of a photodetector together with on-chip readout circuitry enables system-level advantages, such as internal para ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

On the effect of linear feedback and parametric pumping on a resonator's frequency stability

Luis Guillermo Villanueva Torrijo, Zohreh Mohammadi

Resonant sensors based on micro- and nano-electro mechanical systems (M/NEMS) are ubiquitous in many sensing applications due to their outstanding performance capabilities, which are directly proportional to the quality factor (Q) of the devices. We addres ...

2020

Performance of chip-scale optical frequency comb generators in coherent WDM communications

Tobias Kippenberg

Optical frequency combs have the potential to become key building blocks of wavelength-division multiplexing (WDM) communication systems. The strictly equidistant narrow-band spectral lines of a frequency comb can serve either as carriers for parallel WDM ...

2020

AlGaN/GaN Nanowires: from Electron Transport to RF Applications

Giovanni Santoruvo

Gallium Nitride (GaN) and all III-Nitride compounds have revolutionized the world with the development of the blue light emitting diode (LED). In addition, GaN-based epi-structures, such as AlGaN/GaN, enable the fabrication of high electron mobility transi ...

EPFL2020

Active Phase-Conjugating Rotman Lens With Reflection Amplifiers for Backscattering Enhancement

Pouyan Keshavarzian

Active retrodirective antenna arrays find a variety of use in applications involving wireless communication and sensing systems. This article presents a novel active version of the phase-conjugating Rotman lens with negative conductance amplifiers for appl ...

Institute of Electrical and Electronics Engineers2020

An AC-Coupled Wideband Neural Recording Front-End With Sub-1 mm2×fJ/conv-step Efficiency and 0.97 NEF

Yusuf Leblebici, Volkan Cevher, Arda Uran

This letter presents an energy-and-area-efficient ac-coupled front-end for the multichannel recording of wideband neural signals. The proposed unit conditions local held and action potentials using an inverter-based capacitively coupled low-noise amplifier ...

2020

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Georgios Kampitsis

A detailed analysis on the Sawyer–Tower method used in the measurement of large-signal output capacitance (Co) of power transistors is presented, followed by important design recommendations to obtain accurate results. Key factors affecting the proper impl ...

2020

Response of noise-amplifier flows: From linear control to nonlinear jet breakup

Among hydrodynamically unstable flows, the amplifier-flows are characterized by their large amplification potential in presence of external noise. Since amplifiers do not have an intrinsic dynamics, a chosen forcing can be applied to eventually control the ...

EPFL2019

TIA Linearity Analysis for Current Mode Receivers

Catherine Dehollain

Current-mode signal processing offers superior linearity and flexibility in front-end implementation. The linearity of a low-input-impedance Trans-Impedance Amplifier (TIA), which is used as a buffer stage that follows a passive mixer, is important in dete ...

IEEE2018

A 10b SAR ADC with Widely Scalable Sampling Rate and AGC Amplifier Front-End

Yusuf Leblebici, Seyed Armin Tajalli, Firat Çelik, Ayça Akkaya

This paper presents a low power successive approximation register (SAR) ADC and its front-end automatic gain control (AGC) amplifier designed in 65nm CMOS technology. Digitally controlled variable gain amplifier (VGA) in AGC loop is used to maximize the dy ...

IEEE2018

Nonreciprocal Gain in Non-Hermitian Time-Floquet Systems

Romain Christophe Rémy Fleury, Theodoros Koutserimpas

We explore the unconventional wave scattering properties of non-Hermitian systems in which amplification or damping are induced by time-periodic modulation. These non-Hermitian time-Floquet systems are capable of nonreciprocal operations in the frequency d ...

2018

Quantum-Limited Directional Amplifiers with Optomechanics

Tobias Kippenberg, Nathan Rafaël Bernier, László Dániel Tóth

Directional amplifiers are an important resource in quantum-information processing, as they protect sensitive quantum systems from excess noise. Here, we propose an implementation of phase-preserving and phase-sensitive directional amplifiers for microwave ...

2018

Modeling and Analysis for Thermal Management in Gallium Nitride HEMTs Using Microfluidic Cooling

In this paper, thermal management in GaN (gallium nitride) based microelectronic devices is addressed using microfluidic cooling. Numerical modeling is done using finite element analysis (FEA), and the results for temperature distribution are presented for ...

American Society of Mechanical Engineers2017

Digital Predistortion of Power Amplifier Non-Linearities for Full-Duplex Transceivers

Andreas Peter Burg, Alexios Konstantinos Balatsoukas Stimming, Andrew Charles Mallory Austin

Non-linearities introduced by the power amplifier stage can significantly reduce the performance of self-interference cancellation in full-duplex transceivers. Accordingly, we propose a full-duplex system architecture that predistorts the digital baseband ...

Ieee2016

A remotely powered fully integrated low power class-E power amplifier for implantable sensor systems

Catherine Dehollain, Enver Gürhan Kilinç, Kerim Türe

This paper presents a fully integrated low power class-E power amplifier and its integration to remotely powered sensor system. The on-chip 1.2 GHz power amplifier is implemented in 0.18 A mu m CMOS process with 0.2 V supply. The implantable system is powe ...

Springer2016