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Concept

Write amplification

Publications associées (26)

One-shot Garbage Collection for In-memory OLTP through Temporality-aware Version Storage

Anastasia Ailamaki, Periklis Chrysogelos, Angelos Christos Anadiotis, Syed Mohammad Aunn Raza

Most modern in-memory online transaction processing (OLTP) engines rely on multi-version concurrency control (MVCC) to provide data consistency guarantees in the presence of conflicting data accesses. MVCC improves concurrency by generating a new version o ...

ACM2023

Perovskite Flash Memory with a Single-Layer Nanofloating Gate

Mohammad Khaja Nazeeruddin, Peng Gao, Tom Theodorus Antonius Lummen, Peng Gao, Hobeom Kim

Here we use triple-cation metal-organic halide perovskite single crystals for the transistor channel of a flash memory device. Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating gate. It consists of a ternary blend of two organic s ...

2020

RRAM-VAC: A Variability-Aware Controller for RRAM-based Memory Architectures

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Marco Antonio Rios

The growing need for connected, smart and energy efficient devices requires them to provide both ultra-low standby power and relatively high computing capabilities when awoken. In this context, emerging resistive memory technologies (RRAM) appear as a prom ...

2020

Thermal scanning probe lithography-a review

Jürgen Brugger, Samuel Tobias Howell

Fundamental aspects and state-of-the-art results of thermal scanning probe lithography (t-SPL) are reviewed here. t-SPL is an emerging direct-write nanolithography method with many unique properties which enable original or improved nano-patterning in appl ...

2020

RetroWrite: Statically Instrumenting COTS Binaries for Fuzzing and Sanitization

Mathias Josef Payer

Analyzing the security of closed source binaries is currently impractical for end-users, or even developers who rely on third-party libraries. Such analysis relies on automatic vulnerability discovery techniques, most notably fuzzing with sanitizers enable ...

IEEE COMPUTER SOC2020

Design Guidelines for High-Performance SCM Hierarchies

Babak Falsafi, Edouard Bugnion, Javier Picorel Obando, Alexandros Daglis, Mark Johnathon Sutherland, Dmitrii Ustiugov

With emerging storage-class memory (SCM) nearing commercialization, there is evidence that it will deliver the much-anticipated high density and access latencies within only a fewfactors of DRAM. Nevertheless, the latency-sensitive nature of memory-residen ...

ACM2018

TRIAD: creating synergies between memory, disk and log in log structured key-value stores

Rachid Guerraoui, Willy Zwaenepoel, Diego Didona, Oana Maria Balmau

We present TRIAD, a new persistent key-value (KV) store based on Log-Structured Merge (LSM) trees. TRIAD improves LSM KV throughput by reducing the write amplification arising in the maintenance of the LSM tree structure. Although occurring in the backgrou ...

2017

Efficient Logging in Non-Volatile Memory by Exploiting Coherency Protocols

James Richard Larus, Nachshon Cohen

Non-volatile memory (NVM) technologies such as PCM, ReRAM and STT-RAM allow processors to directly write values to persistent storage at speeds that are significantly faster than previous durable media such as hard drives or SSDs. Many applications of NVM ...

ACM2017

Endurance Management for Resistive Logic-In-Memory Computing Architectures

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Mathias Soeken

Resistive Random Access Memory (RRAM) is a promising non-volatile memory technology which enables modern in-memory computing architectures. Although RRAMs are known to be superior to conventional memories in many aspects, they suffer from a low writ ...

Ieee2017

Imaging and manipulation of skyrmion lattice domains in Cu2OSeO3

Helmuth Berger

Nanoscale chiral skyrmions in noncentrosymmetric helimagnets are promising binary state variables in high-density, low-energy nonvolatile memory. Skyrmions are ubiquitous as an ordered, single-domain lattice phase, which makes it difficult to write informa ...

Amer Inst Physics2016

Key/Value-enabled Flash Memory for Complex Scientific Workflows with On-line Analysis and Visualization

Felix Schürmann, Stefan Eilemann, Alessandro Curioni, Peter Morjan, Blake Fitch, Lars Schneidenbach

Scientific workflows are often composed of compute-intensive simulations and data-intensive analysis and visualization, both equally important for productivity. High-performance computers run the compute-intensive phases efficiently, but data-intensive pro ...

Ieee2016

Online Updates on Data Warehouses via Judicious Use of Solid-State Storage

Anastasia Ailamaki, Radu Ioan Stoica, Manoussos Gavriil Athanassoulis

Data warehouses have been traditionally optimized for read-only query performance, allowing only offline updates at night, essentially trading off data freshness for performance. The need for 24x7 operations in global markets and the rise of online and oth ...

Assoc Computing Machinery2015

Libra: Software-Controlled Cell Bit-Density to Balance Wear in NAND Flash

Paolo Ienne, David Novo Bruna, Xavier Jimenez

Hybrid flash storages combine a small Single-Level Cell (SLC) partition with a large Multilevel Cell (MLC) partition. Compared to MLC-only solutions, the SLC partition exploits fast and short local write updates, while the MLC part brings large capacity. O ...

Assoc Computing Machinery2015

Re-writing scheme for solid-state storage devices

Mohammad Amin Shokrollahi, Luoming Zhang

A multi-level cell flash memory storage device has cells wherein different charge levels represent different information. The storage device can read stored charge from one or more cells, store a rewrite generation value for a group of a plurality of cells ...

2014

High Sum-Rate Three-Write and Nonbinary WOM Codes

Write-once memory (WOM) is a storage medium with memory elements, called cells, which can take on q levels. Each cell is initially in level 0 and can only increase its level. A t-write WOM code is a coding scheme, which allows one to store t messages to th ...

Institute of Electrical and Electronics Engineers2014

Rebasing I/O for Scientific Computing: Leveraging Storage Class Memory in an IBM BlueGene/Q Supercomputer

Felix Schürmann, Pramod Shivaji Kumbhar, Fabien Jonathan Delalondre, Lars Schneidenbach, Alessandro Curioni, John Anthony Biddiscombe, Miguel Angel Gila Arrondo, Peter Morjan, Robert Germain, Blake Fitch

Storage class memory is receiving increasing attention for use in HPC systems for the acceleration of intensive IO operations. We report a particular instance using SLC FLASH memory integrated with an IBM BlueGene/Q supercomputer at scale (Blue Gene Active ...

Springer2014

Solid-State Storage and Work Sharing for Efficient Scaleup Data Analytics

Manoussos Gavriil Athanassoulis

Today, managing, storing and analyzing data continuously in order to gain additional insight is becoming commonplace. Data analytics engines have been traditionally optimized for read-only queries assuming that the main data reside on mechanical disks. The ...

EPFL2014

Querying Persistent Graphs using Solid State Storage

Manoussos Gavriil Athanassoulis

Recent advances in solid state technology have led to the introduction of Solid State Drives (SSDs). Todays SSDs store data persistently using NAND flash memory. While SSDs are more expensive than hard disks when measured in dollars per gigabyte, they are ...

2013

Design and Architectural Assessment of 3-D Resistive Memory Technologies in FPGAs

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Mohamed Haykel Ben Jamaa

Emerging Non-Volatile Memories (eNVMs) such as Phase-Change RAMs (PCRAMs) or Oxide-based Resistive RAMs (OxRRAMs) are promising candidates to replace Flash and Static Random Access Memories in many applications. This paper introduces a novel set of buildin ...

Institute of Electrical and Electronics Engineers2013

Numerical and Compact Modeling of Embedded Flash Memory Devices Targeted for IC Design

Davide Garetto

In a semiconductor market dominated by portable consumer applications, embedded flash memory technology has experienced a rapid diffusion. It is now considered the preferred solid-state memory solution for its non-volatile characteristics, high read and wr ...

EPFL2012