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Concept

Failure of electronic components

Publications associées (30)

Buried Hole-selective Interface Engineering for High-efficiency Tin-lead Perovskite Solar Cells with Enhanced Interfacial Chemical Stability

Guixiang Li

Mixed Sn-Pb perovskites are attracting significant attention due to their narrow bandgap and consequent potential for all-perovskite tandem solar cells. However, the conventional hole transport materials can lead to band misalignment or induce degradation ...

ELSEVIER2025

A Gradient-Gated SPAD Array for Non-Line-of-Sight Imaging

Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Pouyan Keshavarzian, Jiuxuan Zhao

Time-resolved non-line-of-sight (NLOS) imaging based on single-photon avalanche diode (SPAD) detectors have demonstrated impressive results in recent years. To acquire adequate number of indirect photons from a hidden scene in the presence of overwhelming ...

Ieee-Inst Electrical Electronics Engineers Inc2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

The effect of plasma shaping on high density H-mode SOL profiles and fluctuations in TCV

Nicola Vianello, Benoît Labit, Holger Reimerdes, Christian Gabriel Theiler, Cedric Kar-Wai Tsui, Umar Sheikh, Guang-Yu Sun, Claudia Colandrea, Sophie Danielle Angelica Gorno, Luke Simons

The impact of plasma shaping on the properties of high density H-mode scrape-off layer (SOL) profiles and transport at the outer midplane has been investigated on Tokamaka configuration variable. The experimental dataset has been acquired by evolving the u ...

IOP Publishing Ltd2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

ICRH assisted breakdown study on JET

Benoît Labit, Haomin Sun, Thomas Binderup Jensen

Ion cyclotron (IC) wave assisted breakdown has the potential to increase the robustness of plasma initiation during the ITER pre-fusion operation phase. Studies were performed at JET at ITER relevant loop electric field, E-loop ? 0.33 Vm(-1), and a range o ...

IOP Publishing Ltd2023

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Luca Nela, Taifang Wang

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022

Impact of rapid thermal processing on bulk and surface recombination mechanisms in FZ silicon with fired passivating contacts

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Mario Joe Lehmann, Audrey Marie Isabelle Morisset, Sofia Libraro

We investigate bulk and interface recombination in crystalline silicon with p-type fired passivating contacts. These consist of a chemical oxide and an in-situ doped layer of SiCx with low carbon content. Following a rapid thermal annealing to activate the ...

ELSEVIER2022

Passivating Polysilicon Recombination Junctions for Crystalline Silicon Solar Cells

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Andrea Ingenito, Mario Joe Lehmann, Philippe Wyss, Audrey Marie Isabelle Morisset

Polysilicon recombination junctions whose n-type bottom layers double as a passivating contact to the silicon surface are investigated. Such recombination junctions are a key element in the interconnection of tandem devices with a silicon bottom cell, and ...

2021

Deep-UV-Enhanced Approach for Low-Temperature Solution Processing of IZO Transistors with High-k AlOx/YAlOx Dielectric

Danick Briand, Jaemin Kim, Alessio Mancinelli

Solution processing is an attractive alternative to standard vacuum fabrication techniques for the large-area manufacturing of metal oxide (MOx)-based electron devices. Here, we report on thin-film transistors (TFTs) based on a solution-processed indium zi ...

AMER CHEMICAL SOC2020

Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses

Christian Enz

Total ionizing dose (TID) mechanisms are investigated in 28-nm MOSFETs via dc static and low-frequency noise measurements. nMOSFETs and pMOSFETs are irradiated up to 1 Grad(SiO2) and annealed at high temperatures. TID sensitivity depends on the channel len ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Characterisation of Silicon Heterojunction Solar Cells Beyond Standard Test Conditions

Jean Cattin

The global photovoltaic market is mostly dominated by solar cells based on crystalline silicon (c-Si), which are covering 95% of the market. This thesis concerns silicon heterojunction (SHJ), a high-efficiency technology with a 2% market share in 2018, but ...

EPFL2020

Reduction of Fermi level pinning at Cu-BP interfaces by atomic passivation

Xiao Zhou

Black phosphorus (BP) is a semiconducting material with a direct finite band gap in its monolayer, attracting intense attention for its application in field-effect transistors. However, strong Fermi level pinning (FLP) has been observed for contacts betwee ...

2019

In situ observation of picosecond polaron self-localisation in alpha-Fe2O3 photoelectrochemical cells

Michael Graetzel, Ludmilla Steier

Hematite (alpha-Fe2O3) is the most studied artificial oxygen-evolving photo-anode and yet its efficiency limitations and their origin remain unknown. A sub-picosecond reorganisation of the hematite structure has been proposed as the mechanism which dictate ...

Springer2019

A 0.5 V 2.5 mu W/MHz Microcontroller with Analog-Assisted Adaptive Body Bias PVT Compensation with 3.13 nW/kB SRAM Retention in 55 nm Deeply-Depleted Channel CMOS

Andreas Peter Burg, David Ruffieux, Thomas Christoph Müller

Microcontroller systems operating at low supply voltage in near- or sub-threshold regime suffer both from increased effects of PVT (Process, Voltage, Temperature) variation and from a larger share of leakage on overall power due to the reduced frequency. W ...

IEEE2019

Long-lived coupled peeling ballooning modes preceding ELMs on JET

Olivier Sauter, Martinus Adela Maria Gijs, Jonathan Graves, Ambrogio Fasoli, Stefano Coda, Basil Duval, Henri Weisen, Richard Pitts, Yves Martin, Javier García Hernández, Duccio Testa, Miguel Fernández Ruiz, Nicola Vianello, Robin Humphry-Baker, Sun Hee Kim, Federico Nespoli, Patrick Blanchard, Alessandro Pau, David Pfefferlé, Davide Galassi, Jonathan Marc Philippe Faustin, Cristian Sommariva, Hamish William Patten, Samuel Lanthaler, Jan Horacek, Yann Camenen, Bruno Emanuel Ferreira De Sousa Correia, José Pedro Rebelo Ferreira Marques, Mikhail Maslov, Marco Wischmeier, Dalziel Joseph Wilson, Liang Yao, Daniel Scott Alessi, Arnout Lodewijk M Beckers, Ana Francisca Leal Silva Soares, Jonnathan Cesar Hidalgo Acosta, Antonio José Pereira de Figueiredo, Partha Dutta, Pierre-Thomas Paul Brun, Pedro Camilo de Oliveira e Silva, Alberto Hernando de Castro, Julio Rodriguez, Vlad Trifa, Li Shuai, Rebecca Hill

In some JET discharges, type-I edge localised modes (ELMs) are preceded by a class of low-frequency oscillations (Perez et al 2004 Nucl. Fusion 44 609). While in many cases the ELM is triggered during the growth phase of this oscillation, it is also observ ...

IOP Publishing Ltd2019

Stretchable and Highly Bendable Thin Film Transistors Based on Atomically Thin Chemical Vapor Deposited Molybdenum Disulfide

Yen-Cheng Kung

Two-dimensional (2D) materials have received tremendous research attention recently, as they possess peculiar physical properties in their monolayer and few-layer forms, which further lead to novel applications. A wide range of 2D materials covers insulato ...

EPFL2018

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs

Christian Enz, Claudio Bruschini, Farzan Jazaeri, Chunmin Zhang, Alessandro Pezzotta

This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex int ...

2017

Low Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Michele De Marchi, Maxime Victor Thammasack

The race for performance of integrated circuits is nowadays facing a downscale limitation. To overpass this nanoscale limit, modern transistors with complex geometries have flourished, allowing higher performance and energy efficiency. Accompanying this br ...

Amer Chemical Soc2017

Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality

Cem Alper

The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...

EPFL2017