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Concept

Strained silicon

Publications associées (26)

III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

Jonathan Emanuel Thomet

This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...

EPFL2023

Atomic-scale Characterization of Strain and Gate effects on Two-dimensional Materials by Scanning Tunneling Microscopy

Jz -Yuan Juo

Strain is an inevitable phenomenon in two-dimensional (2D) material, regardless of whether the film is suspended or supported. Moreover, strain is known to alter the physical and chemical properties, such as the band gap, charge carrier effective masses, d ...

EPFL2023

Highly efficient THz four-wave mixing in doped silicon

Gabriel Aeppli

Third-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet ...

SPRINGERNATURE2021

TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Christian Enz

This article investigates the total ionizing dose (TID) degradation mechanisms of 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs with several channel lengths are irradiated up to 1 Grad(SiO2) and then annealed for 24 h at 100 degrees C. Irradia ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Rational Design of Hole Transport Materials: Tools and Structure-Packing-Property Relationships

Kun-Han Lin

The growing demand for low-cost, large-scale and flexible electronics has led to a boost in research on organic semiconductors (OSC). Understanding structure-packing-property relationships (SPPR) and the role of molecular building blocks in charge transpor ...

EPFL2020

Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature

Mihai Adrian Ionescu, Andreas Schueler, Igor Stolichnov, Anna Krammer, Riyaz Mohammed Abdul Khadar, Matteo Cavalieri, Andrei Müller, Teodor Rosca, Fatemeh Qaderi Rahaqi

This work investigates and reports on the radio-frequency (RF) behavior in the frequency range of 5 – 35 GHz of germanium-doped (Ge-doped VO2) vanadium dioxide thin films, deposited on silicon substrates via sputtering and pulsed laser deposition (PLD) wit ...

2020

Multiarm and Substituent Effects on Charge Transport of Organic Hole Transport Materials

Mohammad Khaja Nazeeruddin, Kevin Sivula, Liang Yao, Antonio Prlj, Kun-Han Lin, Nikita Drigo, Han-Hee Cho

We explore several potential dopant-free triphenylamine-based hole transport materials for perovskite solar cells by combining two design strategies: (1) incorporation of multiple arms for mobility enhancement and (2) including Lewis bases that assist in d ...

2019

Acoustic Actuation Of Suspended Graphene For Linear Excitation Of 2D Nems

Luis Guillermo Villanueva Torrijo, Muhammad Faizan, Marsha Mary Parmar

In this paper, we present the fabrication of on-chip piezoelectric acoustic actuation for 2D materials. Acoustic actuation is achieved at device level through patterning of aluminum nitride (AlN) thin film at wafer scale. Two piezoelectric stacks consistin ...

IEEE2019

Valley-Engineering Mobilities in Two-Dimensional Materials

Nicola Marzari, Giovanni Pizzi, Marco Gibertini, Davide Campi, Thibault Daniel Pierre Sohier

Two-dimensional materials are emerging as a promising platform for ultrathin channels in field-effect transistors. To this aim, novel high-mobility semiconductors need to be found or engineered. Although extrinsic mechanisms can in general be minimized by ...

AMER CHEMICAL SOC2019

Enhanced Electron-Phonon Interaction in Multivalley Materials

Helmuth Berger, Nicola Marzari, Marco Gibertini, Thibault Daniel Pierre Sohier

We report a combined experimental and theoretical investigation that reveals a new mechanism responsible for the enhancement of electron-phonon coupling in doped semiconductors in which multiple inequivalent valleys are simultaneously populated. Using Rama ...

American Physical Society2019

Impact of Strain and Alloy Disorder on the Electronic Properties of III-Nitride Based Two-dimensional Electron Gases

Pirouz Sohi

Over the past 20 years, III-nitrides (GaN, AlN, InN and their alloys) have proven to be an excellent material group for electronic devices, in particular, for high electron mobility transistors (HEMTs) operating at high frequency and high power. This is ma ...

EPFL2019

High Performance Tri-gate GaN Power MOSHEMTs on Silicon Substrate

Elison de Nazareth Matioli, Jun Ma

We demonstrate high-performance GaN power metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on silicon substrate based on a nanowire tri-gate architecture. The common issue of partial removal of carriers by nanowire etching in GaN tri ...

Institute of Electrical and Electronics Engineers2017

Dynamics of Electronic and Ionic Charges in Cyanine Organic Semiconductor Devices

Sandra Christina Jenatsch

Organic semiconductor materials have been widely applied in optoelectronic devices to replace their inorganic counterparts and explore new fields of applications. Due to their high extinction coefficients, chemical tunability and solubility, cyanine dyes a ...

EPFL2017

Charge-Based Modeling of Double-Gate and Nanowire Junctionless FETs Including Interface-Trapped Charges

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

Nanowire (NW) semiconductors are interesting devices for being used as sensors. Such NWs are doped silicon channels with electrical contacts at both ends, which is a kind of the so-called junctionless (JL) device. However, in contrast with the state-of-the ...

Institute of Electrical and Electronics Engineers2016

Graphene Field Effect Devices and Circuits : Theory and Fabrication

Clemens Benedict Nyffeler

Electronics today permeate our life and existence. It has become nearly impossible to evade any dependence on electronic devices that surround us every day - computers, phones, televisions. But also other objects become increasingly "smart" - watches, cars ...

EPFL2016

Absolute deformation potentials of two-dimensional materials

Alfredo Pasquarello, Julia Anna Wiktor

We present ab initio calculations of uniaxial absolute deformation potentials of the valence and the conduction bands in monolayer MoS2, MoSe2, WS2, WSe2, h-BN, and phosphorene. Calculations are performed using both semilocal and hybrid functionals. The ab ...

Amer Physical Soc2016

Spin and orbital disordering by hole doping in Pr1-xCaxVO3

Philip Pattison

High-resolution powder x-ray diffraction and single-crystal neutron diffraction were used to investigate the crystal structure and magnetic ordering of the compound Pr1-xCax VO3 (0

Amer Physical Soc2016

Plasmonic nanohole arrays on Si-Ge heterostructures: An approach for integrated biosensors

Hatice Altug, Liza Carol Andrea Dunbar, Dordaneh Etezadi

Nanohole array surface plasmon resonance (SPR) sensors offer a promising platform for high-throughput label-free biosensing. Integrating nanohole arrays with group-IV semiconductor photodetectors could enable low-cost and disposable biosensors compatible t ...

Spie-Int Soc Optical Engineering2016

Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

Mihai Adrian Ionescu, Ji Cao, Sebastian Thimotee Bartsch

We report wafer-level fabrication of resonant-body, carbon nanotube (CNT)field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obt ...

Amer Chemical Soc2015

CDW and Similarity of the Mott Insulator-to-Metal Transition in Cuprates with the Gas-to-Liquid-Liquid Transition in Supercooled Water

Davide Innocenti

New advances in X-ray diffraction, extended X-ray absorption fine structure (EXAFS), and X-ray absorption near edge structure (XANES) using synchrotron radiation have now provided compelling evidence for a short-range charge density wave phase (CDW) called ...

Springer2015