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Concept

Nonvolatile BIOS memory

Publications associées (14)

Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS2

Andras Kis, Guilherme Migliato Marega

Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges

Matteo Cavalieri

Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

EPFL2021

Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization

Yusuf Leblebici, Thomas La Grange, Tugba Demirci, Elmira Shahrabi

The integration of the resistive random access memory (ReRAM) with CMOS logic circuitry provides a solution to scaling limitations, and offers promising candidates for use in next generation computing applications. It is challenging to realize a reliable, ...

ELSEVIER SCIENCE BV2019

Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications

Mihai Adrian Ionescu, Anisoara Ionescu, Virginie Anne Chenaux

In this paper, we consider devices, circuits, and systems comprised of transistors with integrated ferroelectrics. Said structures are actively being considered by various semiconductor manufacturers as they can address a large and unique design space. Tra ...

IEEE2018

Copper TSV-Based Process Development for Die-Level Homogeneous and Heterogeneous 3D Integration Platform

Seniz Esra Küçük

Research and development efforts on chip and wafer-scale 3D integration for system miniaturization have been continuing for more than a decade. However, there are still only a handful of 3D integrated products available in the market due to the high cost a ...

EPFL2017

Chip-Level CMOS Co-Integration of ReRAM-Based Non-Volatile Memories

Yusuf Leblebici, Jury Sandrini, Tugba Demirci, Mahmoud Hadad, Elmira Shahrabi, Behnoush Attarimashalkoubeh

This work reports a technique to fabricate ReRAM crossbar arrays co-integrated with fully finished 180 nm CMOS technology chips. The proposed integration method enables low- cost ReRAM-CMOS integration and allows the rapid prototyping of complete memory sy ...

Ieee2016

Large-scale neural networks implemented with nonvolatile memory as the synaptic weight element: comparative performance analysis (accuracy, speed, and power)

Yusuf Leblebici, Irem Boybat Kara, Severin Sidler

We review our work towards achieving competitive performance (classification accuracies) for on chip machine learning (ML) of large scale artificial neural networks (ANN) using Non-Volatile Memory (NVM) based synapses, despite the inherent random and deter ...

2015

Nonvolatile Memory Cells Based on MoS2/graphene heterostructures

Andras Kis, Daria Krasnozhon, Simone Bertolazzi

Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 ...

Amer Chemical Soc2013

Ferroelectric Field Effect Transistor for Memory and Switch Applications

Giovanni Antonio Salvatore

Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...

EPFL2011

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Mihai Adrian Ionescu, Nava Setter, Didier Bouvet, Igor Stolichnov, Sebastian Riester, Roman Gysel, Giovanni Antonio Salvatore

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

2008

Semiconductor memory cell, array, architecture and device, and method of operating same

Serguei Okhonin

There are many inventions described and illustrated herein. In a first aspect, the present invention is directed to a memory cell and technique of reading data from and writing data into that memory cell. In this regard, in one embodiment of this aspect of ...

2007

Deep-submicron embedded processor architectures for high-performance, low-cost and low-power

Sylvain Aguirre

Because the market has an insatiable appetite for new functionality, performance is becoming an increasingly important factor. The telecommunication and network domains are especially touched by this phenomenon but they are not the only ones. For instance, ...

EPFL2007

Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN/GaN heterostructures

Nava Setter, Paul Muralt, Igor Stolichnov, Lisa Malin

The concept of a field-effect transistor with ferroelectric gate has been implemented using the GaN/AlGaN heterostructure combined with Pb(Zr,Ti)O-3 ferroelectric layer. The processing conditions were optimized in a way to obtain textured Pb(Zr,Ti)O-3 film ...

2006

Integration and modeling of ferroelectric devices in a standard CMOS porcess for low power non-volatile memories

Vincent Meyer

The present work analyzes the impact of ferroelectric materials like PZT when integrated in a standard 0.5µm CMOS process in order to realize nonvolatile memories. The project has been initiated conjointly by the Swiss Federal Institute of Technology of La ...

EPFL2005