Mediaspace scheduled maintenance: Aug 25, 2026 07:00 - 12:00 AM. During this time, videos will be temporarily unavailable. Check status updates.

Concept

Physique mésoscopique

Publications associées (25)

Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor Including Quantum Confinement

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

We investigate the effect of asymmetric configurations on the heterogate germanium electron-hole bilayer tunnel field-effect transistor (HG-EHBTFET) and assess the improvement that they provide in terms of boosting the typically very low ON current levels ...

Institute of Electrical and Electronics Engineers2015

Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

The analysis of quantum mechanical confinement in recent germanium electron-hole bilayer tunnel field-effect transistors has been shown to substantially affect the band-to-band tunneling (BTBT) mechanism between electron and hole inversion layers that cons ...

American Institute of Physics2014

Structural, optical and crystal field analyses of undoped and Mn2+-doped ZnS nanoparticles synthesized via reverse micelle route

Barbora Bártová

Zinc sulfide, both as a bulk material and in nanocrystalline form, is a valuable luminescent material with important applications. Doped ZnS nanoparticles of around 5 nm are the material of choice for optoelectronic applications running in the UV region ow ...

Elsevier Science Bv2014

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

Mihai Adrian Ionescu, Jean-Michel Sallese, Wladyslaw Grabinski, Mohammad Najmzadeh, Matthieu Berthomé

In this paper, we report the first systematic study on electron mobility extraction in equilateral triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm. 1 x 10(19) cm(-3) n-type channel doping, 5-20 nm Si nanowire wi ...

Pergamon-Elsevier Science Ltd2014

Dual-Color Electroluminescence from Dot-in-Bulk Nanocrystals

Christophe Marcel Georges Galland

The emission color from colloidal semiconductor nanocrystals (NCs) is usually tuned through control of particle size, while multicolor emission is obtained by mixing NCs of different sizes within an emissive layer. Here, we demonstrate that recently introd ...

Amer Chemical Soc2014