Unit

Laboratory of Advanced Semiconductors for Photonics and Electronics

Laboratory

Summary

The Laboratory in Semiconductors Advances for Photonics and Electronics (LASPE) at EPFL focuses on researching group-III nitride semiconductors like GaN, AlN, and InN for applications in Photonics and Electronics. Their work includes investigating microcavities for strong coupling, quantum dots and nanostructures, two- and one-dimensional photonic crystals, and short-wavelength optoelectronics. LASPE also explores high-power electronics through the growth and physics of AlInN GaN 2D electron gas heterojunctions for high-electron mobility transistors.

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Laboratory of Advanced Semiconductors for Photonics and Electronics

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