Publication

Carrier Mobility Extraction Methodology in Junctionless and Inversion-Mode FETs

Jean-Michel Sallese, Farzan Jazaeri
2015
Journal Articles

Abstract

In this paper, we propose a new method to extract the free carrier mobility in junctionless (JL) double-gate FETs biased in accumulation. We show that, in addition to assuming a well-defined field-dependent mobility law, using the well-known Y-function is not accurate enough in JL FETs. In addition, the new methodology is also interesting for inversion-mode FETs. This approach has been assessed with technology computer-aided design simulations, and confirms its robustness both for JL and inversion-mode devices.

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https://infoscience.epfl.ch/entities/publication/ff566a7c-1ec7-434a-aac9-f74f09ccac65

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Jean-Michel Sallese, Farzan Jazaeri
2015
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/ff566a7c-1ec7-434a-aac9-f74f09ccac65

About this result

Related concepts (11)

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Depletion and enhancement modes

In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits. These devices are off at zero gate–source voltage. NMOS can be turned on by pulling the gate voltage higher than the source voltage, PMOS can be turned on by pulling the gate voltage lower than the source voltage.

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