Publication

Carrier Mobility Extraction Methodology in Junctionless and Inversion-Mode FETs

Jean-Michel Sallese, Farzan Jazaeri
2015
Journal Articles

Abstract

In this paper, we propose a new method to extract the free carrier mobility in junctionless (JL) double-gate FETs biased in accumulation. We show that, in addition to assuming a well-defined field-dependent mobility law, using the well-known Y-function is not accurate enough in JL FETs. In addition, the new methodology is also interesting for inversion-mode FETs. This approach has been assessed with technology computer-aided design simulations, and confirms its robustness both for JL and inversion-mode devices.

Official source

https://infoscience.epfl.ch/entities/publication/ff566a7c-1ec7-434a-aac9-f74f09ccac65

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Carrier Mobility Extraction Methodology in Junctionless and Inversion-Mode FETs

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