Semiconductor deviceA semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.
Volta potentialThe Volta potential (also called Volta potential difference, contact potential difference, outer potential difference, Δψ, or "delta psi") in electrochemistry, is the electrostatic potential difference between two metals (or one metal and one electrolyte) that are in contact and are in thermodynamic equilibrium. Specifically, it is the potential difference between a point close to the surface of the first metal and a point close to the surface of the second metal (or electrolyte). The Volta potential is named after Alessandro Volta.
Plasma propulsion engineA plasma propulsion engine is a type of electric propulsion that generates thrust from a quasi-neutral plasma. This is in contrast with ion thruster engines, which generate thrust through extracting an ion current from the plasma source, which is then accelerated to high velocities using grids/anodes. These exist in many forms (see electric propulsion). However, in the scientific literature, the term "plasma thruster" sometimes encompasses thrusters usually designated as "ion engines".
Cyclic voltammetryIn electrochemistry, cyclic voltammetry (CV) is a type of potentiodynamic measurement. In a cyclic voltammetry experiment, the working electrode potential is ramped linearly versus time. Unlike in linear sweep voltammetry, after the set potential is reached in a CV experiment, the working electrode's potential is ramped in the opposite direction to return to the initial potential. These cycles of ramps in potential may be repeated as many times as needed.
Co-fired ceramicCo-fired ceramic devices are monolithic, ceramic microelectronic devices where the entire ceramic support structure and any conductive, resistive, and dielectric materials are fired in a kiln at the same time. Typical devices include capacitors, inductors, resistors, transformers, and hybrid circuits. The technology is also used for robust assembly and packaging of electronic components multi-layer packaging in the electronics industry, such as military electronics, MEMS, microprocessor and RF applications.
Wafer-level packagingWafer-level packaging (WLP) is a process where packaging components are attached to an integrated circuit (IC) before the wafer – on which the IC is fabricated – is diced. In WSP, the top and bottom layers of the packaging and the solder bumps are attached to the integrated circuits while they are still in the wafer. This process differs from a conventional process, in which the wafer is sliced into individual circuits (dice) before the packaging components are attached.
Wafer (electronics)In electronics, a wafer (also called a slice or substrate) is a thin slice of semiconductor, such as a crystalline silicon (c-Si), used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells. The wafer serves as the substrate for microelectronic devices built in and upon the wafer. It undergoes many microfabrication processes, such as doping, ion implantation, etching, thin-film deposition of various materials, and photolithographic patterning.
Project Orion (nuclear propulsion)Project Orion was a study conducted in the 1950s and 1960s by the United States Air Force, DARPA, and NASA into the viability of a nuclear pulse spaceship that would be directly propelled by a series of atomic explosions behind the craft. Early versions of the vehicle were proposed to take off from the ground; later versions were presented for use only in space. The design effort took place at General Atomics in San Diego, and supporters included Wernher von Braun, who issued a white paper advocating the idea.
Threshold voltageThe threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead.
Gate arrayA gate array is an approach to the design and manufacture of application-specific integrated circuits (ASICs) using a prefabricated chip with components that are later interconnected into logic devices (e.g. NAND gates, flip-flops, etc.) according to custom order by adding metal interconnect layers in the factory. It was popular during the upheaval in the semiconductor industry in the 1980s, and its usage declined by the end of the 1990s.
Uncrewed spacecraftRobotic spacecraft or uncrewed spacecraft are spacecraft without people on board. Uncrewed spacecraft may have varying levels of autonomy from human input; they may be remote controlled, remote guided or autonomous: they have a pre-programmed list of operations, which they will execute unless otherwise instructed. A robotic spacecraft for scientific measurements is often called a space probe or space observatory. Many space missions are more suited to telerobotic rather than crewed operation, due to lower cost and risk factors.
Standard electrode potentialIn electrochemistry, standard electrode potential , or , is a measure of the reducing power of any element or compound. The IUPAC "Gold Book" defines it as: "the value of the standard emf (electromotive force) of a cell in which molecular hydrogen under standard pressure is oxidized to solvated protons at the left-hand electrode". The basis for an electrochemical cell, such as the galvanic cell, is always a redox reaction which can be broken down into two half-reactions: oxidation at anode (loss of electron) and reduction at cathode (gain of electron).
