Publication

Microscopic Schottky-Barrier Control - Semiconductor-on-Metal Case

Giorgio Margaritondo
1992
Journal Articles

Abstract

We have modified the Schottky-barrer height of Si overlayers on Ag(111) substrates by means of Cs intralayers of different thicknesses. We also found a correlation between these changes and those of the work function, which makes it possible to measure the true value of the S parameter.

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Microscopic Schottky-Barrier Control - Semiconductor-on-Metal Case

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