Publication

Growth of Gainas(P) and Gainasp/Gainas Mqw Structures by Cbe

Jean-François Carlin, Alok Rudra, Marc Ilegems, Jean-Louis Staehli
1992
Journal Articles

Abstract

We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 angstrom GaInAs quantum wells with GaInAsP barriers and waveguides showed a 4 K photoluminescence line width of 8.7 meV. Transmission electron microscopy and X-ray diffraction confirm the good control over the growth of these structures.

Official source

https://infoscience.epfl.ch/entities/publication/f41b178a-8fe9-45de-8355-9d0b7de8476b

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Jean-François Carlin, Alok Rudra, Marc Ilegems, Jean-Louis Staehli
1992
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/f41b178a-8fe9-45de-8355-9d0b7de8476b

About this result

Related concepts (29)

Indium gallium arsenide

Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.

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A scanning transmission electron microscope (STEM) is a type of transmission electron microscope (TEM). Pronunciation is [stɛm] or [ɛsti:i:ɛm]. As with a conventional transmission electron microscope (CTEM), images are formed by electrons passing through a sufficiently thin specimen. However, unlike CTEM, in STEM the electron beam is focused to a fine spot (with the typical spot size 0.05 – 0.2 nm) which is then scanned over the sample in a raster illumination system constructed so that the sample is illuminated at each point with the beam parallel to the optical axis.

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Growth of Gainas(P) and Gainasp/Gainas Mqw Structures by Cbe

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