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We propose a simple quantum structure which exhibits resonant tunneling under one bias and simple tunneling under the opposite one, thus acting as a rectifier. The diode consists of a single laterally-indented barrier. Due to its particular conduction-band profile, electrons undergo resonant tunneling when the bias creates a band-profile triangular well which can contain a resonant state aligned to the emitter Fermi energy. A diode with an active layer of approximate to 100 Angstrom, realized by AlGaAs/GaAs, has a Rectification Ratio, calculated at the current-peak bias at resonance, of approximate to 100. This value can be enhanced by putting in series several elements of this kind. (C) 1995 Academic Press Limited
Elyahou Kapon, Alok Rudra, Benjamin Dwir