Publication

Characterization of lattice-matched single In1-xGaxAsyP1-y quantum wells grown by conventional liquid phase epitaxy

Jean-Louis Staehli
1994
Journal Articles

Abstract

In this letter the liquid phase epitaxial growth of In0.71Ga0.29As0.68P0.32 (lambda(g) = 1.32 mum) single quantum well structures lattice matched to (001) InP substrates is reported. The electrical and optical confinement was formed either by InP or In0.88Ga0.12As0.26 p0.74 (lambda(g) = 1.05 mum). Low-temperature photoluminescence was employed to prove the samples capable of displaying quantum size effects. Energy upshifts up to 125 meV were measured for InP-clad quantum wells of about 50 angstrom thickness. All multilayered stacks originate from step-cooling growth cycles in an ordinary linear slider boat. Streamlining of the experimental conditions has led to a conspicuous decrease in the FWHM values of the blueshift signals.

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https://infoscience.epfl.ch/entities/publication/ebe03915-2ac2-47f9-8d94-0ea8c58b20da

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Jean-Louis Staehli
1994
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/ebe03915-2ac2-47f9-8d94-0ea8c58b20da

About this result

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