Publications related to Metallic Nanowires by Full Wafer Stencil Lithography

Semiconductor-based device architectures in multimaterial fibers

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Controlled filamentation instability as a scalable fabrication approach to flexible metamaterials

Fabien Sorin, Louis Marie Philippe Martin-Monier, Pierre-Luc Eloi Piveteau, William Nicolas Duncan Esposito

Long and flexible arrays of nanowires find impactful applications in sensing, photonics, and energy harvesting. Conventional manufacturing relies largely on lithographic methods limited in wafer size, rigidity, and machine write time. Here, we report a sca ...

Nature Portfolio2022

Ionic Liquid Gating of SrTiO3 Lamellas Fabricated with a Focused Ion Beam

Evgeny Mikheev, Amelia Emily-Kay Estry, Philip Johannes Walter Moll

In this work, we combine two previously incompatible techniques for defining electronic devices: shaping three-dimensional crystals by focused ion beam (FIB), and two-dimensional electrostatic accumulation of charge carriers. The principal challenge for th ...

AMER CHEMICAL SOC2022

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

Anna Fontcuberta i Morral, Lucas Güniat, Wonjong Kim, Valerio Piazza

Semiconductor nanowires (NWs) have been investigated for decades, but their application into commercial products is still difficult to achieve, with triggering causes related to the fabrication cost and structure complexity. Dopant control at the nanoscale ...

2021

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

Increasing Functionality of III-V Nanowires on Silicon Substrates

Wonjong Kim

Progress in nanotechnology, including fabrication and characterization tools, opened up the unprecedented low dimensional materials era, where we can manipulate and structure matter on a size scale that we could not reach before. Due to many interesting pr ...

EPFL2020

Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices

Philipp Staudinger

Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

EPFL2020

Semiconductor Nanowires: To Grow or Not to Grow?

Anna Fontcuberta i Morral

Semiconductor nanowires have demonstrated exciting properties for nanophotonics, sensors, energy technologies and end-of-roadmap and beyond-roadmap electronic devices. Fabrication schemes for nanowires are varied, but they fall into three general categorie ...

2019

Template-assisted grown III-V semiconductor nanowires: A transmission electron microscopy study

Nicolas Bologna

III-V semiconductor nanowires are, due to their unique properties, one of the most promising nanostructures developed in the last decades. However, the realization of commercial devices made of III-V nanowires, such as transistors and solar cells, has not ...

EPFL2019

Growth of nanowire arrays from micron-feature templates

Anna Fontcuberta i Morral, Gaëtan Bernard, Martin George Friedl, William Craig Carter, Dmitry Mikulik, Lea Ghisalberti, Wonjong Kim, Pablo Romero Gómez, Christian André Jürgensen

Here, we present a two-step annealing procedure to imprint nanofeatures on SiO2 starting from metallic microfeatures. The first annealing transforms the microfeatures into gold nanoparticles and the second imprints these nanoparticles into the SiO2 layer w ...

2019

Single crystal diamond micro-disk resonators by focused ion beam milling

Niels Quack, Marcell Kristof Kiss, Teodoro Graziosi, Sichen Mi

We report on single crystal diamond micro-disk resonators fabricated in bulk chemical vapor deposition diamond plates (3 mm x 3 mm x 0.15 mm) using a combination of deep reactive ion etching and Focused Ion Beam (FIB) milling. The resulting structures are ...

2018

Fast H isotope and impurity mixing in ion-temperature-gradient turbulence

Patrick Blanchard, Basil Duval, Ambrogio Fasoli, Yves Martin, Richard Pitts, Olivier Sauter, Henri Weisen, Robin Humphry-Baker, Stefano Coda, Martinus Gijs, Partha Dutta, Marco Wischmeier, Jan Horacek, Vlad Trifa, Yann Camenen, Jonathan Graves, Duccio Testa, Miguel Fernández Ruiz, Sun Hee Kim, Mikhail Maslov, Javier García Hernández, David Pfefferlé, José Pedro Rebelo Ferreira Marques, Julio Rodriguez, Pedro Camilo de Oliveira e Silva, Rebecca Hill, Daniel Scott Alessi, Jonnathan Cesar Hidalgo Acosta, Ana Francisca Leal Silva Soares, Dalziel Joseph Wilson, Pierre-Thomas Paul Brun, Jonathan Marc Philippe Faustin, Federico Nespoli, Alberto Hernando de Castro, Hamish William Patten, Bruno Emanuel Ferreira De Sousa Correia, Li Shuai, Nicola Vianello, Antonio José Pereira de Figueiredo, , , , , , , , , ,

Gold-free Growth of InAs Nanowires : Growth, Structural & Electrical Properties

Heidi Andrea Potts

Semiconductor nanowires are interesting building blocks for a variety of electronic and optoelectronic applications, and they provide an excellent platformto probe fundamental physical effects. For the realization of nanowire based devices, a deep understa ...

EPFL2017

Superplastic behavior of silica nanowires obtained by direct patterning of silsesquioxane-based precursors

Yusuf Leblebici, Mustafa Yilmaz, Mohammad Nasr Esfahani

Silica nanowires spanning 10 μm-deep trenches are fabricated from different types of silsesquioxane-based precursors by direct e-beam patterning on silicon followed by release through deep reactive ion etching. Nanowire aspect ratios as large as 150 are ac ...

Institute of Physics2017

Ordered nanostructures on silicon substrates : from the top-down to the bottom-up

Jelena Vukajlovic Plestina

Silicon is today the main material used in electronics. It is a very advanced and mature technology. It is therefore clear that new technological concepts and materials should be introduced through the integration on the silicon platform. III-V semiconduct ...

EPFL2017

Plasmonic Waveguide-Integrated Nanowire Laser

Anna Fontcuberta i Morral, Gözde Tütüncüoglu

Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitiv ...

American Chemical Society2017

GaAs nanowires: from doping to plasmonic hybrid devices

Alberto Casadei

Semiconductor nanowires (NWs) are filamentary crystals with the diameter ranging from few tens up to few hundreds of nanometers. In the last 20 years, they have been intensively studied for the prospects that their unique quasi-one dimensional shape offers ...

EPFL2016

Growth of GaAs nanowires on Si (111) for photovoltaic applications

Federico Matteini

The goal of this thesis is to master the synthesis of GaAs nanowires ensembles on Si for their application in solar cells. Semiconductor nanowires present promising characteristics for photovoltaic applications: they benefit from their longitudinal high as ...

EPFL2016

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Anna Fontcuberta i Morral, Sonia Conesa Boj, Heidi Andrea Potts

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the int ...

American Chemical Society2016

Polarization response of nanowires a la carte

Anna Fontcuberta i Morral, Martin Heiss, Esther Alarcon Llado, Eleonora Russo, Alberto Casadei, Francesca Amaduzzi

Thanks to their special interaction with light, semiconductor nanowires have opened new avenues in photonics, quantum optics and solar energy harvesting. One of the major challenges for their full technological deployment has been their strong polarization ...

Nature Publishing Group2015