Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes

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Ring resonators have proven to be extremely successful for generation of temporal dissipative Kerr solitons, but their dispersion engineering is limited. We present a photonic-crystal Fabry-Perot resonator with record-high quality factors in gallium phosph ...

An enduring challenge in constructing mechanical-oscillator-based hybrid quantum systems is to ensure engineered coupling to an auxiliary degree of freedom and maintain good mechanical isolation from the environment, that is, low quantum decoherence, consi ...

The development of cost-effective and earth-abundant semiconducting materials is imperative for the sustainable deployment of photovoltaic technology. Zinc phosphide (Zn3P2) is a promising candidate for terawatt-scale electricity generation. It has a near- ...

Nanosized particles of liquid metals are emerging materials which hold promise for applications spanning from microelectronics to catalysis. Yet, the knowledge of their chemical reactivity is largely unknown. Here, we study the reactivity of liquid Ga and ...

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Harnessing nonequilibrium hot carriers from plasmonic metal nanostructures constitutes a vibrant research field with the potential to control photochemical reactions, particularly for solar fuel generation. However, a comprehensive understanding of the int ...

The rising atmospheric level of carbon dioxide, CO2, contributes to climate change and poses urgent need to find scalable solutions both to decrease its emissions and to be able to recycle it, if the goals of Paris Agreement to limit the temperature rise a ...

Silicon Nitride (Si3N4) photonic integrated circuits (PICs) have emerged as core technology in a variety of applications ranging from LIDAR to quantum control and computing. However, the need for high-speed, low-voltage tuning and modulation has been a lon ...

Indium phosphide quantum dots (InP QDs) are a promising example of Restriction of Hazardous Substances directive (RoHS)-compliant light-emitting materials. However, they suffer from low quantum yield and instability upon processing under ambient conditions ...

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is con ...

Towards defect-free 1-D GaAs/AlGaAs heterostructures based on GaAs nanomembranes

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Soliton Generation in a Gallium Phosphide Photonic-Crystal Fabry-Perot Microresonator

A squeezed mechanical oscillator with millisecond quantum decoherence

Zn3P2 as an earth-abundant photovoltaic material: from growth to device

Voltage-driven Chemical Reactions Enable the Synthesis of Tunable Liquid Ga – Metal Nanoparticles

Electronic Structure of Few-Layer Black Phosphorus from & mu;-ARPES

GeSn as next-generation material for short-wave infrared single-photon detection

Transport and Interfacial Injection of d-Band Hot Holes Control Plasmonic Chemistry

Voltage-driven Reactivity of Liquid Ga and CuGa Nanoparticles for Electrocatalytic CO2 Reduction and Synthesis

Programmable Silicon Nitride Photonic Integrated Circuits

Surface Chemistry Dictates the Enhancement of Luminescence and Stability of InP QDs upon c-ALD ZnO Hybrid Shell Growth

Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement