Publications related to Uni-directional GaN-on-Si MOSHEMTs with high reverse-blocking voltage based on nanostructured Schottky drain

Related publications (10)

Grayscale nanopatterning for strain-engineered 2D materials

Semiconductor innovation is shifting from traditional dimensional scaling toward novel architectures and materials as lithography nears its physical limits. FinFETs and GAAFETs have marked key milestones, with scaling now progressing through 3D stacking. M ...

EPFL2025

Vanadium-Doped Hafnium Oxide: A High-Endurance Ferroelectric Thin Film with Demonstrated Negative Capacitance

Emeric Emmanuel Hartmann, Mihai Adrian Ionescu, Igor Stolichnov, Niccolò Martinolli, Anna Varini, Ehsan Ansari

This study proposes and validates a novel CMOS-compatible ferroelectric thin-film insulator made of vanadium-doped hafnium oxide (V:HfO2) by using an optimized atomic layer deposition (ALD) process. Comparative electrical performance analysis of metal-ferr ...

AMER CHEMICAL SOC2025

HfO Thin Films by Chemical Beam Vapor Deposition for Large Resistive Switching Memristors

Sarunas Bagdzevicius

We present chemical beam vapor deposition (CBVD) as a valuable technique for the fabrication of good quality HfO2-based memristors. This deposition technique gives the opportunity to rapidly screen material properties in combinatorial mode and to reproduce ...

2024

Porous Nitride Light-Emitting Diodes

Anna Fontcuberta i Morral, Nicolas Tappy

A porous InGaN/GaN blue light-emitting diode is demonstrated using selective area sublimation. Transmission electron microscopy reveals that the structure is porous down to the Si substrate; however, the porosity is higher in the GaN buffer, while smaller ...

2022

Efficient random number generation techniques for CMOS single-photon avalanche diode array exploiting fast time tagging units

Edoardo Charbon, Samuel Burri

This work presents a technique to produce random bits by exploiting single-photon time of arrival. Two quantum random number generator (QRNG) devices based on the field programmable gate array (FPGA) technology are presented: Randy, which uses one discrete ...

AMER PHYSICAL SOC2020

Negative capacitance semiconductor sensor

Mihai Adrian Ionescu, Ali Saeidi, Francesco Bellando

The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically ...

2020

Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory

Mihai Adrian Ionescu, Didier Bouvet, Livio Lattanzio, Giovanni Antonio Salvatore

The performance of a standard MOSFET degrades with the increase in temperature, impacting the power consumption of the device. In this paper, we report the opposite trend, which is reflected in an improvement of main performance factors in ferroelectric FE ...

2011

Wireless Voltage Regulation for Passive Transponders Using an IF to Communicate

Catherine Dehollain, Michel Declercq

This paper presents a novel architecture for wireless communication systems made up of a base station and a remotely powered transponder. The architecture enables the base station to perform wireless voltage regulation (WVR) of the rectifier's output volta ...

2010

Selective Redundancy-Based Design Techniques for the Minimization of Local Delay Variations

Yusuf Leblebici, Alexandre Schmid, Milos Stanisavljevic

In this paper a novel approach to optimize digital integrated circuits yield with regards to speed and area/power for aggressive scaling technologies is presented. The technique is intended to reduce the effects of intra-die variations using redundancy app ...

IEEE Service Center2010

An ester-substituted iridium complex for efficient vacuum-processed organic light-emitting diodes

Michael Graetzel, Mohammad Khaja Nazeeruddin, Rosario Scopelliti, Libero Zuppiroli, Philippe Bugnon, Stéphane Suarez

An orange-red-emitting iridium complex (N958) was prepared, and its photophysical and device-based characteristics were investigated. Despite N958 displaying quite poor photophysical properties in solution (acetonitrile), organic light-emitting diode (OLED ...

2009