Publication

Physically clustered forward body biasing for variability compensation in nanometer CMOS design

Related publications (32)

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

EPFL2019

Low-Power Design of Digital VLSI Circuits around the Point of First Failure

Andrea Bonetti

As an increase of intelligent and self-powered devices is forecasted for our future everyday life, the implementation of energy-autonomous devices that can wirelessly communicate data from sensors is crucial. Even though techniques such as voltage scaling ...

EPFL2019

Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

Edoardo Charbon, Fabio Sebastiano

Cryogenic device models are essential for the reliable design of the cryo-CMOS interface that enables large-scale quantum computers. In this paper, mismatch characterization and modeling of a 40-nm bulk CMOS process over the 4.2-300 K temperature range is ...

IEEE2019

A Real-Time Multi-Camera Depth Estimation ASIC with Custom On-Chip Embedded DRAM

Jonathan Emmanuel D Narinx

The capability to process high-resolution videos in real-time is becoming more important in a wide variety of applications such as autonomous vehicles, virtual reality or intelligent surveillance systems. The high-accuracy and complex video processing algo ...

EPFL2019

Power Analysis Resilient SRAM Design Implemented with a 1% Area Overhead Impedance Randomization Unit for Security Applications

Robert Giterman

Power analysis attacks are an effective tool to extract sensitive information using side-channel analysis, forming a serious threat to IoT systems-on-a-chip (SoCs). Embedded memories implemented with conventional 6T SRAM macrocells often dominate the area ...

IEEE2019

Exploration of Negative Capacitance Devices and Technologies

Ali Saeidi

Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...

EPFL2019

A 6.5-GHz Cryogenic All-Pass Filter Circulator in 40-nm CMOS for Quantum Computing Applications

Edoardo Charbon, Fabio Sebastiano, Andrea Ruffino, Yatao Peng

Cryogenic solid-state quantum processors require classical control and readout electronics; to achieve compactness and scalability, cryogenic integrated circuits have been recently proposed for this goal. Circulators are widely used in readout circuits, ho ...

2019

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

Mihai Adrian Ionescu, Fabien Patrick Wildhaber, Hoël Maxime Guérin, Maneesha Rupakula, Erick Antonio Garcia Cordero, Junrui Zhang, Francesco Bellando, Guillaume Charles Henri Herment

Ion sensitive field effect transistors (ISFETs) form a very attractive solution for wearable sensors due to their capacity for ultra-miniaturization, low power operation, and very high sensitivity, supported by complementary metal oxide semiconductor (CMOS ...

2019

Trading off Energy versus Accuracy in Modern Computing Systems : From Digital Circuit Design to Programming Techniques

Jérémy Lucien Maurice Schlachter

The slowdown of Moore's law, which has been the driving force of the electronics industry over the last 5 decades, is causing serious problem to Integrated Circuits (ICs) improvements. Technology scaling is becoming more and more complex and fabrication co ...

EPFL2018

Heterogeneous and Inexact: Maximizing Power Efficiency of Edge Computing Sensors for Health Monitoring Applications

David Atienza Alonso, Soumya Subhra Basu, Giovanni Ansaloni, Loris Gérard Duch, Miguel Peon Quiros

In the Internet-of-Things (IoT) era, there is an increasing trend to enable intelligent behavior in edge computing sensors. Thus, a new generation of smart wearable devices for health monitoring is being developed, able to perform complex Digital Signal Pr ...

IEEE2018

Design techniques for a stable operation of cryogenic field-programmable gate arrays

Edoardo Charbon, Harald Arjan Robert Homulle

In this paper, we show how a deep-submicron field-programmable gate array (FPGA) can be operated more stably at extremely low temperatures through special firmware design techniques. Stability at low temperatures is limited through long power supply wires ...

2018

High voltage metal oxide thin film transistors to drive arrays of dielectric elastomer actuators

Alexis Pierre Henri Marette

This thesis advances the field of high-voltage thin film transistors (HVTFTs) and dielectric elastomer actuators (DEAs) by demonstrating a strategy for low-voltage addressing of an array of high voltage soft actuators suspended on a flexible substrate. Fi ...

EPFL2018