Publication

Novel spectromicroscopy: Pt-GaP studies by spatially resolved internal photoemission with near-field optics

Giorgio Margaritondo
1996
Journal Articles

Abstract

The combination of internal photoemission and near-field optics is proposed as a generally applicable approach to study the lateral variations of solid interface properties such as energy barriers and electron-hole recombination rates. A successful test on Pt-GaP is described in which topographic and nontopographic phenomena are revealed, in particular recombination rate variations and small lateral changes of the Schottky barrier height. (C) 1996 American Institute of Physics.

Official source

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Giorgio Margaritondo
1996
Journal Articles

Abstract

Official source

Related concepts (28)

Electron hole

In physics, chemistry, and electronic engineering, an electron hole (often simply called a hole) is a quasiparticle denoting the lack of an electron at a position where one could exist in an atom or atomic lattice. Since in a normal atom or crystal lattice the negative charge of the electrons is balanced by the positive charge of the atomic nuclei, the absence of an electron leaves a net positive charge at the hole's location. Holes in a metal or semiconductor crystal lattice can move through the lattice as electrons can, and act similarly to positively-charged particles.

Carrier generation and recombination

In the solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, light-emitting diodes and laser diodes. They are also critical to a full analysis of p-n junction devices such as bipolar junction transistors and p-n junction diodes.

Auger effect

The Auger effect or Auger−Meitner effect is a physical phenomenon in which the filling of an inner-shell vacancy of an atom is accompanied by the emission of an electron from the same atom. When a core electron is removed, leaving a vacancy, an electron from a higher energy level may fall into the vacancy, resulting in a release of energy. Although most often this energy is released in the form of an emitted photon, the energy can also be transferred to another electron, which is ejected from the atom; this second ejected electron is called an Auger electron.

Related publications (9)

Novel spectromicroscopy: Pt-GaP studies by spatially resolved internal photoemission with near-field optics

Chat with Graph Search

Catalyst and Electrode Design for Selective and Durable Copper-Catalyzed Electrochemical Carbon Dioxide Reduction

Steady-State Dynamic RON Measurements of GaN HEMTs: Role of Voltage-and Temperature-Dependent Time Constants

Single‐Crystalline Lateral p ‐SnS/ n ‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping