Publication

High temperature micro-hotplate

Paul Muralt, Jacek Baborowski, Nicolas Ledermann
2002
Patents

Abstract

A micro-hotplate device, useful in catalytic high-temperature chemical sensors, micro-chemical reactors and as infra-red source, in particular at temperatures above 600 DEG C, comprises a thin film resistive heater (1) made of a refractory metal silicide selected from silicides of tantalum, zirconium, tungsten, molybdenum, niobium and hafnium, the silicide having a polycrystalline structure obtainalble at temperatures above 600 DEG C. The thin film resistive heater (1) is encapsulated between insulating layers (2a, 2b) forming a sandwich structure (5) and is located in a membrane (7) over an aperture (6) in a silicon substrate (4). The device is producible by standard micromachining techniques.

Official source

https://infoscience.epfl.ch/entities/publication/d20bcd54-b962-4848-bfae-a2bda63c8a5e

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Paul Muralt, Jacek Baborowski, Nicolas Ledermann
2002
Patents

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/d20bcd54-b962-4848-bfae-a2bda63c8a5e

About this result

Related concepts (27)

Photolithography

In integrated circuit manufacturing, photolithography or optical lithography is a general term used for techniques that use light to produce minutely patterned thin films of suitable materials over a substrate, such as a silicon wafer, to protect selected areas of it during subsequent etching, deposition, or implantation operations. Typically, ultraviolet light is used to transfer a geometric design from an optical mask to a light-sensitive chemical (photoresist) coated on the substrate.

Silicon on sapphire

Silicon on sapphire (SOS) is a hetero-epitaxial process for metal–oxide–semiconductor (MOS) integrated circuit (IC) manufacturing that consists of a thin layer (typically thinner than 0.6 μm) of silicon grown on a sapphire (Al2O3) wafer. SOS is part of the silicon-on-insulator (SOI) family of CMOS (complementary MOS) technologies. Typically, high-purity artificially grown sapphire crystals are used. The silicon is usually deposited by the decomposition of silane gas (SiH4) on heated sapphire substrates.

Silicide

A silicide is a type of chemical compound that combines silicon and a usually more electropositive element. Silicon is more electropositive than carbon. Silicides are structurally closer to borides than to carbides. Similar to borides and carbides, the composition of silicides cannot be easily specified as covalent molecules. The chemical bonds in silicides range from conductive metal-like structures to covalent or ionic. Silicides of all non-transition metals have been described except beryllium.

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High temperature micro-hotplate

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