Focused electron beam induced deposition of gold

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Solar blind detectors based on AlGaN grown by Molecular Beam Epitaxy and Metal Organic Vapor Phase Epitaxy have been fabricated and characterized. Metal Semiconductor Metal (MSM) detectors and vertical Schottky detectors have been realized, with a design that allows back side illumination. The growth was optimized in order to improve the layer quality, avoid crack fort-nation, and provide the best detector performance. The technological process was also optimized in order to reduce the dark currents and imp

This thesis covers the analysis of the catalytic growth of carbon nanotubes under well de fined conditions, the optimization of the field emission properties of those structures and introduces a model for the growth mechanism based on the experimental results. Experimental investigations are presented which allow to get a comprehensive picture of the catalytic growth of carbon nanotube films. These films were generated by patterning silicon surfaces with transition metal catalysts usingmicro contact printin

Electron Beam Induced Deposition (EBID) allows deposition of three-dimensional micro- and nano-structures of conductive and insulating materials on a wide range of substrates. The process is based on the decomposition of molecules of a pre-selected precursor by a focused electron beam. In recent decades EBID of several metals, namely Au, W, Cu and Pt, from different families of precursors, has been achieved and the technique has found some application for small-scale production of laboratory devices and for

In the Tokamak a Configuration Variable (TCV), the central electron temperature obtained in discharges with counter (CNTR) electron cyclotron current drive (ECCD) is larger than with CO-ECCD or electron cyclotron resonance heating (ECRH) alone. Comparison of experimental results with calculations by the transport code PRETOR [IAEA Technical Conference on Advances in Simulation and Models of Thermonuclear Plasmas. Montreal 142 (International Atomic Energy Agency, Vienna 1992)] indicates that sawtooth stabili

We describe the first stage of the evolution of CL spectra, intensity and dislocation contrast under low keV electron beam for ELO-GaN with a low dislocation density. The UV and yellow intensities are decreased by beam irradiation. We have observed a broadening of the UV peak towards low energies followed by a red shift. This is explained in terms of an electron beam activation of non-radiative centers which relax partially the compressive strain, The dislocation contrast is lowered, but the dislocations be

We explored degradation in electron-beam-pumped Zn1-xCdxSe/ZnSe laser structures by combining cathodoluminescence (CL) measurements in a scanning electron microscope with transmission electron microscopy. The rate of degradation, measured as the decrease of the emitted CL intensity under electron bombardment, depends critically on the threading dislocation density and on the strain in the quantum well. Degradation occurs via the formation of dark spot defects, which are related to bombardment-induced networ

We tested a new soft-x-ray transmission spectromiscropy technique on the Aladdin storage ring at the Wisconsin Synchrotron Radiation Center. Transmitted x rays were converted with a photocathode into photoelectrons, which were subsequently electron-optically processed by an x-ray secondary electron-emission microscope producing submicron-resolution images. Test images demonstrated the excellent contrast due to the chemical differences between silicon features and a silicon nitride substrate. We also obtaine

We have grown high-electron mobility transistor structures in the Al0.3Ga0.7As/In0.25Ga0.75As/GaAs material system with In0.25Ga0.75As channel thicknesses in the range 40-200 Angstrom. We have monitored the onset of channel relaxation using Hall mobility measurements, polychromatic cathodoluminescence mapping, time-resolved photoluminescence, transmission electron microscopy, low-frequency noise,and deep-level transient spectroscopy measurements. It appears that the first relaxation symptom, the Stransky-Kr

The piezoelectric properties of SrBi4Ti4O15 and Bi4Ti2.95Nb0.04O12 have been compared as a function of applied ac stress. Evidence of domain-wall motion was observed in Bi4Ti2.95Nb0.04O12 but not in SrBi4Ti4O15. Examination of SrBi4Ti4O15 using transmission electron microscopy revealed that the material had undergone an orthorhombic-orthorhombic, paraelectric-ferroelectric, phase transition in which no piezoelectrically active, non-180 degrees, domain walls could be created. However, for the orthorhombic-mo

This thesis deals with the monolithic integration of long wavelength (1.3-1.55 µm) p-i-n photodiodes with HEMT field effect transistors for the realization of wide bandwidth OEIC receivers for lightwave communication systems. Part of this work was carried out in collaboration with the Laboratory for Electromagnetic Fields and Microwave Electronics (IFH) of the ETH-Zürich. The p-i-n photodiode structure consisting of a n+-InP lower contact layer, a 1 µm undoped InGaAs absorption layer and a 100 nm p+-InGaAs

Microgun-pumped blue lasers with lasing thresholds in the 4-20 kW/cm(2) range for temperatures between 83 and 225 K were fabricated by molecular beam epitaxy. The devices exploit graded index, separate confinement Zn1-xCdxSe/ZnSe heterostructures and use an array of low-voltage field-emission microtips for electron beam pumping. Degradation occurs through the formation of characteristic (100) dark-line defects, as in diode lasers. The device lifetime exceeded several hours at 83 K for a laser operating at 4

We present the first results from the upgraded version of the scanning photoemission spectromicroscope MAXIMUM, bared on synchrotron undulator fight and on a multilayer-coated Schwarzschild objective. The upgrade involved nearly all parts of the instrument, notably the beamline and the electron analysis system. Micro-images of Fresnel zone plates and of metal test patterns on semiconductor substrates reached a new record in lateral resolution, well beyond 0.1 micron. The first spectromicroscopy tests were a

Focused electron beam induced deposition of gold

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High performance solar blind detectors based on AlGaN grown by MBE and MOCVD

Analysis of the catalytic growth of carbon nanotubes

Electron beam induced deposition of rhodium nanostructures

Central electron temperature enhancements due to sawtooth stabilization during counter electron cyclotron current drive in Tokamak a Configuration Variable

Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0001) sapphire

Combined transmission electron microscopy and cathodoluminescence studies of degradation in electron-beam-pumped Zn1-xCdxSe/ZnSe blue-green lasers

An electron imaging approach to soft-x-ray transmission spectromicroscopy

Optimum channel thickness of Al0.3Ga0.7As/In0.25Ga0.75As/GaAs heterostructures for electron transport applications

Crystal structure and domain-wall contributions to the piezoelectric properties of strontium bismuth titanate ceramics

Photorécepteurs 1,3-1,55 µm obtenus par intégration monolithique de photodiodes p-i-n et de transistors HEMT

Degradation of microgun-pumped blue lasers

Scanning Photoemission Microscopy on Maximum Reaches 0.1 Micron Resolution