Suppressing Nucleation in Metal–Organic Chemical Vapor Deposition of MoS2

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GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

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Suppressing Nucleation in Metal–Organic Chemical Vapor Deposition of MoS2

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