Characteristics and ultra-high total ionizing dose response of 22nm fully depleted silicon-on-insulator

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

The dual-channel gate driver (D-GD) is widely employed in the industry to support the extensive adoption of half-bridge power modules. With the growing popularity of silicon-carbide (SiC) devices in medium-voltage scenarios known for their superior switchi ...

Residual stresses can be advantageously used to permanently preload flexure micro-mechanisms in order to modify their deflection and stiffness. This paper presents a new preloading chevron mechanism (PCM) used to amplify the preloading effect of thin film ...

Electron accelerators such as synchrotrons and storage rings are the best sources of X-rays and ultraviolet photons for research and technological applications. The physical mechanisms for all these sources use relativistic effects to increase the emission ...

The transistor compact model is crucial but has yet to mature for cryogenic electronics. This paper presents a sophisticated analytical model of the MOSFET subthreshold current at cryogenic temperatures, accounting for the thermionic, hopping, source-to-dr ...

A toroidal Alfven eigenmode (TAE) has been observed to be driven by alpha particles in a JET deuterium-tritium internal transport barrier plasma. The observation occurred 50 ms after the removal of neutral beam heating (NBI). The mode is observed on magnet ...

Pump-probe time-resolved imaging is a powerful technique that enables the investigation of dynamical processes. Signal-to-noise and sampling rate restrictions normally require that cycles of an excitation are repeated many times with the final signal recon ...

Adiabatic superconducting devices are promising candidates to develop high-speed/low-power electronics. Advances in physical technology must be matched with a systematic development of comprehensive design and simulation tools to bring superconducting elec ...

During the operation of the CMS experiment at the High-Luminosity LHC the silicon sensors of the Phase-2 Outer Tracker will be exposed to radiation levels that could potentially deteriorate their performance. Previous studies had determined that planar flo ...

Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâ s excellent performance properties such as high sw ...

Characteristics and ultra-high total ionizing dose response of 22nm fully depleted silicon-on-insulator

Chat with Graph Search

Advanced Dual-Channel Gate Driver with Short-circuit Protection for Series Connected Medium-Voltage SiC MOSFETs

Residual stress chevron preloading amplifier for large-stroke stiffness reduction of silicon flexure mechanisms

Synchrotron radiation

Analytical Modeling of Cryogenic Subthreshold Currents in 22-nm FDSOI Technology

Stability analysis of alpha driven toroidal Alfven eigenmodes observed in JET deuterium-tritium internal transport barrier plasmas

Periodogram-Based Detection of Unknown Frequencies in Time-Resolved Scanning Transmission X-ray Microscopy

Majority-based Design Flow for AQFP Superconducting Family

Selection of the silicon sensor thickness for the Phase-2 upgrade of the CMS Outer Tracker

Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)

Advanced CMOS Circuits for Multi-Gb/s Links and 3D I/O Based on Through Silicon Via Technology

EKV Model of the MOS Transistor