Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics

About
Privacy
Disclaimer

Graph Chatbot

Related publications (29)

Page 2 of 2

Investigating Non-equilibrium Physics in Wide Bandgap Semiconductors and Quantum Materials via Ultrafast Spectroscopy

Hui-Yuan Chen

This thesis uses femtosecond laser spectroscopy in studying strong correlation in condensed matters that are pertinent to future technology: a wide bandgap perovskite and a quantum material, with the employment of ultrafast time-resolved spectroscopy in th ...

EPFL2024

Alleviating nanostructural phase impurities enhances the optoelectronic properties, device performance and stability of cesium-formamidinium metal-halide perovskites

Anaël Morgane Jaffrès, Christophe Ballif, Quentin Thomas Jeangros, Aïcha Hessler-Wyser, Christian Michael Wolff, Mostafa Rabie Shlaly Bahr Othman, Daniel Anthony Jacobs, Austin George Kuba

The technique of alloying FA+ with Cs+ is often used to promote structural stabilization of the desirable alpha-FAPbI3 phase in halide perovskite devices. However, the precise mechanisms by which these alloying approaches improve the optoelectronic quality ...

Royal Soc Chemistry2024

Computational Studies on the Stability of Organic-Inorganic Hybrid Halide Lead Perovskites

Mathias Dankl

Perovskite-based solar cells are currently the most rapidly advancing photovoltaic technology but concerns about their long-term stability are still impeding full-scale commercialization. This thesis provides computational insights into some of the stabili ...

EPFL2024

Axial-Equatorial Halide Ordering in Layered Hybrid Perovskites from Isotropic-Anisotropic 207Pb NMR

David Lyndon Emsley, Aditya Mishra, Michael Allan Hope, Manuel Cordova, Ümmügülsüm Günes

Bandgap-tuneable mixed-halide 3D perovskites are of interest for multi-junction solar cells, but suffer from photoinduced spatial halide segregation. Mixed-halide 2D perovskites are more resistant to halide segregation and are promising coatings for 3D per ...

Wiley-VCH Verlag GmbH2024

Dataset to accompany publication "Best practices in measuring absorption at the macro- and microscale"

Giulia Tagliabue, Alan Richard Bowman, Fateme Kiani Shahvandi, Jiaming Ma

This dataset accompanies the publication "Best practices in measuring absorption at the macro- and microscale" published in APL Photonics. The data can be used to reproduce original plots in figures 1-4 in the main text and all original plots in the suppor ...

Zenodo2024

A thermotropic liquid crystal enables efficient and stable perovskite solar modules

Mohammad Khaja Nazeeruddin, Bin Ding, Yong Ding

Perovskite solar cells have seen impressive progress in performance and stability, yet maintaining efficiency while scaling area remains a challenge. Here we find that additives commonly used to passivate large-area perovskite films often co-precipitate du ...

Nature Portfolio2024

Correlating long-term performance and aging behaviour of building integrated PV modules

Christophe Ballif, Alessandro Francesco Aldo Virtuani, Ebrar Özkalay

Because building-integrated photovoltaic (BIPV) modules are fully integrated into a building envelope, the back of the module can be exposed to little or no ventilation, resulting in increased operating temperatures. As the temperature increases, the perfo ...

Elsevier Science Sa2024

Characterization of a flexible a-Si:H detector for in vivo dosimetry in therapeutic x-ray beams

Nicolas Würsch, Jonathan Emanuel Thomet, Luca Massimiliano Antognini, Sylvain Dunand

BackgroundThe increasing use of complex and high dose-rate treatments in radiation therapy necessitates advanced detectors to provide accurate dosimetry. Rather than relying on pre-treatment quality assurance (QA) measurements alone, many countries are now ...

Wiley2024

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Elison de Nazareth Matioli, Alessandro Floriduz, Uiho Choi

In this work, we demonstrate that GaN can be directly grown at high temperature on Si(111) substrates by metalorganic CVD without using any intentional AlN buffer, by simply employing a trimethylaluminum (TMAl) preflow. We found that n-GaN layers directly ...

Iop Publishing Ltd2024