Publication

Synthesis of regular computational fabrics with ambipolar CNTFET technology

2010
Conference Papers

Abstract

In this paper, we report on a physical design of regular fabrics with ambipolar CNTFET devices. Three mediumgrain size cells, built with ambipolar CNTFETs with in-field controllable polarities are evaluated. We designed regular layouts using these cells using 32nm technology rules and we performed technology mapping and routing of a set of benchmark circuits. CNTFET-based cells were then compared with an existent configurable cell of similar grain size, the Actel ACT1 logic brick, simulated with a 32nm MOSFET model. We obtained delays about 2× better than those obtained with ACT1 after normalization to the intrinsic technology delay. After technology mapping and routing steps, we report performances about 8× better in terms of area × normalized delay for the CNTFETbased cells over the Actel ACT1 cell.

Official source

https://infoscience.epfl.ch/entities/publication/cafb1507-b3b6-4596-a860-1e885589a2df

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2010
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/cafb1507-b3b6-4596-a860-1e885589a2df

About this result

Related concepts (32)

Semiconductor device fabrication

Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.

Physical design (electronics)

In integrated circuit design, physical design is a step in the standard design cycle which follows after the circuit design. At this step, circuit representations of the components (devices and interconnects) of the design are converted into geometric representations of shapes which, when manufactured in the corresponding layers of materials, will ensure the required functioning of the components. This geometric representation is called integrated circuit layout.

Multigate device

A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).

Related publications (1)

Synthesis of regular computational fabrics with ambipolar CNTFET technology

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