Publication

Preparation, processing and tunneling in YBa2Cu3O7-δ-Pb native-barrier structures

Davor Pavuna
1993
Journal Articles

Abstract

The authors have developed a procedure for the preparation of small (40×40 μm2) window-type YBa2Cu3O7-δ-Pb junctions with YSZ insulator and native tunnel barrier. They present the patterning technique of the two electrodes based on photolithography and wet etching. The nature of the barrier is found to be semiconducting. The tunneling measurements show gap-like feature of YBa2Cu3O7-δ at 8.5 meV and some additional features related to Pb and YBa2Cu3O7-δ phonon spectra

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Davor Pavuna
1993
Journal Articles

Abstract

Official source

Related concepts (13)

Electrode

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Reactive-ion etching

Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it. A typical (parallel plate) RIE system consists of a cylindrical vacuum chamber, with a wafer platter situated in the bottom portion of the chamber.