Publications related to Hydrophobic coating of mica by stearic acid vapor deposition

Related publications (32)

Colloidal Atomic Layer Deposition on Nanocrystals Using Ligand-Modified Precursors

Raffaella Buonsanti, Anna Loiudice, Petru Pasquale Albertini, Ona Segura Lecina, Philippe Benjamin Green, Jari Leemans, Mark Adrian Newton, Coline Marie Agathe Boulanger, Krishna Kumar

Atomic layer deposition (ALD) is a method to grow thin metal oxide layers on a variety of materials for applications spanning from electronics to catalysis. Extending ALD to colloidally stable nanocrystals promises to combine the benefits of thin metal oxi ...

Amer Chemical Soc2024

Long live(d) CsPbBr3 superlattices: colloidal atomic layer deposition for structural stability

Raffaella Buonsanti, Philippe Benjamin Green, Alexander Nicolas Chen

Superlattice formation afforded by metal halide perovskite nanocrystals has been a phenomenon of interest due to the high structural order induced in these self-assemblies, an order that is influenced by the surface chemistry and particle morphology of the ...

Royal Soc Chemistry2024

Nanostructure and Optical Property Tailoring of Zinc Tin Nitride Thin Films through Phenomenological Decoupling: A Pathway to Enhanced Control

Aïcha Hessler-Wyser, Johann Michler, Caroline Hain, Daniele Casari

This work addresses the need for precise control of thin film sputtering processes to enable thin film material tailoring on the example of zinc tin nitride (ZTN) thin films deposited via microwave plasma-assisted high power reactive magnetron sputtering ( ...

Amer Chemical Soc2024

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Didem Dede

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

EPFL2024

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Yao Chen

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

EPFL2024

Scalable Approaches to III-V Nanowires for Photodetection

Nicholas Paul Morgan

III-V semiconductor nanowires have unique properties that make them ideal for advanced photodetectors on inexpensive substrates. For example, they exhibit enhanced or polarization-dependent light absorption, they can form complex heterostructures, and thei ...

EPFL2023

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

GeSn as next-generation material for short-wave infrared single-photon detection

Andrea Giunto

In recent years, the automotive industry has aspired to bring self-driving vehicles to the general public and light detection and ranging (LiDAR) sensors have emerged as the preferred solution for car vision systems. At present, LiDAR technologies employ e ...

EPFL2023

Aperture-Controlled Fabrication of All-Dielectric Structural Color Pixels

Audrey Zoé Marie Jacquillat, Olivier Martin, Philippe Renaud, Arnaud Bertsch, Daniel Migliozzi, Evgenii Glushkov, Hsiang-Chu Wang, Clémentine Sophie Sarah Lipp

While interference colors have been known for a longtime, conventionalcolor filters have large spatial dimensions and cannot be used tocreate compact pixelized color pictures. Here we report a simple yetelegant interference-based method of creating microsc ...

AMER CHEMICAL SOC2023

Zn3P2 as an earth-abundant photovoltaic material: from growth to device

Rajrupa Paul

The development of cost-effective and earth-abundant semiconducting materials is imperative for the sustainable deployment of photovoltaic technology. Zinc phosphide (Zn3P2) is a promising candidate for terawatt-scale electricity generation. It has a near- ...

EPFL2023

Silica aerogel as rear reflector in silicon heterojunction solar cells for improved infrared response

Deniz Türkay

Silicon (Si), with its indirect bandgap, is a non-ideal absorber. Thus, various strategies to boost silicon solar cells' efficiency, including advanced texturing, multilayer anti-reflecting coating, and rear reflectors are utilized. Dielectrics, deposited ...

ELSEVIER2023

Structural and photophysical investigation of single-source evaporation of CsFAPbI(3) and FAPbI(3) perovskite thin films

Mohammad Khaja Nazeeruddin, Hiroyuki Kanda, Albertus Adrian Sutanto, Maria Cristina Momblona Rincón, Nadja Isabelle Desiree Klipfel

Thermal vacuum deposition is a stimulating technique for upscaling perovskite solar cells. However, the operational complexity of multisource vapor deposition (MSVD) and achieving stoichiometric perovskite layers may impede its implementation. The single-s ...

Royal Society of Chemistry2022

Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

Aleksandra Radenovic, Andras Kis, Michal Daniel Macha, Yanfei Zhao, Mukesh Kumar Tripathi, Mukeshchand Thakur, Jing Zhang, Hyungoo Ji

Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the m ...

ROYAL SOC CHEMISTRY2022

Controlled filamentation instability as a scalable fabrication approach to flexible metamaterials

Fabien Sorin, Louis Marie Philippe Martin-Monier, Pierre-Luc Eloi Piveteau, William Nicolas Duncan Esposito

Long and flexible arrays of nanowires find impactful applications in sensing, photonics, and energy harvesting. Conventional manufacturing relies largely on lithographic methods limited in wafer size, rigidity, and machine write time. Here, we report a sca ...

Nature Portfolio2022

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks

Anna Fontcuberta i Morral, Alok Rudra, Nicholas Paul Morgan, Andrea Giunto, Santhanu Panikar Ramanandan

Holes in germanium nanowires have emerged as a realistic platform for quantum computing based on spin qubit logic. On top of the large spin–orbit coupling that allows fast qubit operation, nanowire geometry and orientation can be tuned to cancel out charge ...

American Chemical Society (ACS)2022

van der Waals Epitaxy of Co10–xZn10–yMnx+y Thin Films: Chemical Composition Engineering and Magnetic Properties

Anna Fontcuberta i Morral, Dirk Grundler, Jean-Baptiste Leran, Simon Robert Escobar Steinvall, Rajrupa Paul, Ping Che, Mohammad Hamdi, Andrea Mucchietto

Topologically protected magnetic skyrmions have raised interest for future spintronics applications. One of the main challenges is the synthesis of room temperature skyrmion-hosting materials that are compatible with thin-film technology. We present an app ...

2021

Crystalline Order in Compound Semiconductors in Nanoscale Structures and Thin Films

Mahdi Zamani

Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...

EPFL2021

Synthesis, structural and magnetic characterization of thin films of the chiral magnets CoZnMn and FeGe

Anna Kúkol'ová

Skyrmions are topologically protected nanometer-sized magnetic vortices that have sparked interest for future spintronics applications aiming at high-density, high-speed and low-power consuming magnetic memory devices. One type of skyrmions appears in non- ...

EPFL2021

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

Anna Fontcuberta i Morral, Wonjong Kim, Lucas Güniat, Valerio Piazza

Semiconductor nanowires (NWs) have been investigated for decades, but their application into commercial products is still difficult to achieve, with triggering causes related to the fabrication cost and structure complexity. Dopant control at the nanoscale ...

2021