Memristor-Based Devices for Sensing

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III-N family of materials has offered multiple groundbreaking technologies in the field of optoelectronics and high-power radio-frequency (RF) devices. Blue light-emitting diodes (LEDs) have revolutionized low-energy lighting. Gallium nitride (GaN) RF mark ...

Gas sensing systems and devices based on metal oxides are widely spreading due to their high performance in terms of sensor response and relatively low costs. Despite several experimental studies, as well as molecular simulations, are available in the lite ...

Neuromorphic computing is a wide research field aimed to the realization of brain-inspired hardware, apt to tackle computation of unstructured data more efficiently than currently done with standard computational units. Oscillatory neural networks are know ...

Monitoring human sweat with wearable biochemical sensors could give insights into the hydration, fatigue, and health status, tracking the variations of biomarkers non-invasively and in real-time. In this field, organic electrochemical transistors (OECTs) a ...

Hybrid halide perovskites are currently one of the most studied semiconductors. However, due to poor intrinsic and extrinsic stability, further developments to commercialize devices based on hybrid halide perovskites are limited. Many different strategies ...

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

A burst image sensor named Hanabi, meaning fireworks in Japanese, includes a branching CCD and multiple CMOS readout circuits. The sensor is backside-illuminated with a light/charge guide pipe to minimize the temporal resolution by suppressing the horizont ...

Wide-Band-Gap semiconductors have enabled considerable miniaturization of power devices, which requires, however, new thermal management solutions to handle the resulting high heat fluxes. Recently, embedded liquid cooling in GaN-on-Si devices was demonstr ...

The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically ...

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

Highly data-centric AI workloads require that new computing paradigms be adopted because the performance of traditional CPU- and GPU-based systems are limited by data access and transfer. Training deep neural networks with millions of tunable parameters ta ...

Two-dimensional MXenes with their outstanding physical and chemical properties have been extensively used in numerous fields such as electrochemical energy storage, catalysis, and sensing. In these applications, high active surface area and facilitated dif ...

In recent years, sweat has gained increasing attention from the scientific community as a new analyte for health monitoring. The main advantage with respect to the "Gold Standard" for laboratory analysis, i.e. blood, is of course the possibility of perform ...

Memristor-Based Devices for Sensing

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Heterostructure design and field management in III-N high-electron mobility electronic devices

Modelling electronic transport in monocrystalline metal oxide gas sensors: from the surface kinetics to the experimental response

Networks of Coupled VO2 Oscillators for Neuromorphic Computing

Configurable Organic Electrochemical Transistors with Printed Functional Materials for Multiplexed Sweat Analysis

Structure-property relationships and mixed conductivity in layered hybrid perovskites based on phenyl-derived spacers

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

A Pixel Design of a Branching Ultra-Highspeed Image Sensor

Impact of Embedded Liquid Cooling on the Electrical Characteristics of GaN-on-Si Power Transistors

Negative capacitance semiconductor sensor

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Multi-memristive synaptic architectures for training neural networks

Coating Porous MXene Films with Tunable Porosity for High-Performance Solid-State Supercapacitors

Sweat monitoring with CMOS compatible technology: ISFETS and beyond