102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

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102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

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Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Origin of giant enhancement of phase contrast in electron holography of modulation-doped n-type GaN

Influence of Si3N4 fillers and pyrolysis profile on the microstructure of additively manufactured silicon carbonitride ceramics derived from polyvinylsilazane

Photoinduced Second-Order Nonlinearities in Centrosymmetric Media

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

Protection unit for wide bandgap power switching device and method for operating the wide bandgap power switching device

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Momentum-Space Imaging of Ultra-Thin Electron Liquids in δ-Doped Silicon

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

Measurement of WBG-based power supplies