Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

The escalating energy demand and the imperative necessity to reduce the carbon footprint require transformative approaches to energy conversion. Materials chemistry plays a pivotal role in addressing these global challenges by developing novel materials fo ...

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

III-V semiconductor nanowires have unique properties that make them ideal for advanced photodetectors on inexpensive substrates. For example, they exhibit enhanced or polarization-dependent light absorption, they can form complex heterostructures, and thei ...

This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...

Nanosized particles of liquid metals are emerging materials which hold promise for applications spanning from microelectronics to catalysis. Yet, the knowledge of their chemical reactivity is largely unknown. Here, we study the reactivity of liquid Ga and ...

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is con ...

Indium phosphide quantum dots (InP QDs) are a promising example of Restriction of Hazardous Substances directive (RoHS)-compliant light-emitting materials. However, they suffer from low quantum yield and instability upon processing under ambient conditions ...

In recent years, the automotive industry has aspired to bring self-driving vehicles to the general public and light detection and ranging (LiDAR) sensors have emerged as the preferred solution for car vision systems. At present, LiDAR technologies employ e ...

We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. ...

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

Modern solid-state devices were made possible by the discovery of semiconductor heterostructures. Heterostructures offer the ability to fabricate low-dimensional nanostructures such as quantum dots which can restrain carriers in all three-directions. Quant ...

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

Long and flexible arrays of nanowires find impactful applications in sensing, photonics, and energy harvesting. Conventional manufacturing relies largely on lithographic methods limited in wafer size, rigidity, and machine write time. Here, we report a sca ...

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

Chat with Graph Search

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Hybrid organic/metal-oxide shells on semiconductor nanocrystals via colloidal atomic layer deposition

Semiconductor-based device architectures in multimaterial fibers

Scalable Approaches to III-V Nanowires for Photodetection

III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

Voltage-driven Chemical Reactions Enable the Synthesis of Tunable Liquid Ga – Metal Nanoparticles

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Surface Chemistry Dictates the Enhancement of Luminescence and Stability of InP QDs upon c-ALD ZnO Hybrid Shell Growth

GeSn as next-generation material for short-wave infrared single-photon detection

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Synthesis and properties of heterostructures in nanowires and 2-D materials

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Controlled filamentation instability as a scalable fabrication approach to flexible metamaterials

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation