Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

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In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...

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Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

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GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

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