Semiconductor innovation is shifting from traditional dimensional scaling toward novel architectures and materials as lithography nears its physical limits. FinFETs and GAAFETs have marked key milestones, with scaling now progressing through 3D stacking. M ...
We present chemical beam vapor deposition (CBVD) as a valuable technique for the fabrication of good quality HfO2-based memristors. This deposition technique gives the opportunity to rapidly screen material properties in combinatorial mode and to reproduce ...
Two-dimensional dopant layers (δ-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs ...
The Cu-3d states in the high-T-c cuprates are often described as a single band of 3d(x2-y2) states, with the other four 3d states having about 2 to 3 eV higher energy due to the lower-than-octahedral crystal field at the copper sites. However, excitations ...
The present invention relates to a semiconductor sensor (1) comprising: a source element (17, 19); a drain element (21, 23); a semiconductor channel element (25) between the source element (17, 19) and the drain element (21, 23) for forming an electrically ...
Heterogeneous catalyst preparation has been performed for close to a century but has been rapidly evolving spurred by the evolution in synthetic techniques and growing needs in energy, chemicals and materials. An increasing number of catalyst synthesis str ...
In this work we present uni-directional GaN-on-Si MOSHEMTs with state-of-the-art reverse-blocking performance. We integrated tri-anode Schottky barrier diodes (SBDs) with slanted tri-gate field plates (FPs) as the drain electrode, and achieved a high rever ...
Additive Manufacturing (AM) is an emerging part production technology that offers many ad-vantages such as high degree of customization, material savings and design of 3D highly complex structures. However, AM is a complex multiphysics process. Therefore, ...
Short- and long-range impurity-induced polar ordering in Sr1-xCaxTiO3 (x = 0.014) single crystals was investigated and discussed on the basis of light refraction, morphic birefringence and temperature-dependent dielectric hysteresis loop measurements. Anew ...
