Publication

A back-illuminated 3D-stacked single-photon avalanche diode in 45nm CMOS technology

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes
2018
Conference Papers

Abstract

We report on the world's first back-illuminated 3D-stacked single-photon avalanche diode (SPAD) in 45nm CMOS technology. This SPAD achieves a dark count rate of 55.4cps/μm 2 , a maximum photon detection probability of 31.8% at 600nm, over 5% in the 420-920nm wavelength range, and timing jitter of 107.7ps at 2.5V excess bias voltage and room temperature. To the best of our knowledge, these are the best results ever reported for any back-illuminated 3D-stacked SPAD technology.

Official source

https://infoscience.epfl.ch/entities/publication/a5b31d34-582c-4355-b59e-4cb4121334e7

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Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes
2018
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/a5b31d34-582c-4355-b59e-4cb4121334e7

About this result

Related concepts (6)

CMOS

Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", siːmɑːs, -ɒs) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits.

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A back-illuminated 3D-stacked single-photon avalanche diode in 45nm CMOS technology

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