Publication

Movpe Growth and Properties of Gap Using Nitrogen Bridged Adduct

Jean-Louis Staehli
1992
Journal Articles

Abstract

Amongst the new precursors for the III component in MOVPE there are numerous nitrogen containing compounds. Using those compounds, besides the electrical and optical quality of the grown material, the question of incorporation of nitrogen arises. We present the results of GaP growth with the TMGa-TMN adduct. Photoluminscence at 2 K clearly detects nitrogen as a substitutional dopant. Considering the luminescence features the nitrogen concentration was estimated to be about 10(16)-10(17) cm-3. The residual carrier concentration of the layers is in the range of 10(15) cm-3. No oxygen-related emission was observed. A discussion of the growth and the properties of the material is given.

Official source

https://infoscience.epfl.ch/entities/publication/a2d9617a-a5ac-4c38-b142-9f179aee3bd6

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Jean-Louis Staehli
1992
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/a2d9617a-a5ac-4c38-b142-9f179aee3bd6

About this result

Related concepts (32)

Nitrogen

Nitrogen is the chemical element with the symbol N and atomic number 7. Nitrogen is a nonmetal and the lightest member of group 15 of the periodic table, often called the pnictogens. It is a common element in the universe, estimated at seventh in total abundance in the Milky Way and the Solar System. At standard temperature and pressure, two atoms of the element bond to form N2, a colorless and odorless diatomic gas. N2 forms about 78% of Earth's atmosphere, making it the most abundant uncombined element in air.

Metalorganic vapour-phase epitaxy

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition.

Nitrogen dioxide

Nitrogen dioxide is a chemical compound with the formula NO2. It is one of several nitrogen oxides. NO2 is an intermediate in the industrial synthesis of nitric acid, millions of tons of which are produced each year for use primarily in the production of fertilizers. At higher temperatures it is a reddish-brown gas. It can be fatal if inhaled in large quantities. Nitrogen dioxide is a paramagnetic, bent molecule with C2v point group symmetry. It is included in the NOx family of atmospheric pollutants.

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