SiGe Based Cryo-BiCMOS Architectures for Quantum Applications

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

This paper presents a novel CMOS RF-to-DC converter for ultra-low-power wireless sensor nodes powered by RF wireless power transfer. The proposed converter achieves 10% higher power conversion efficiency than a conventional rectifier, with only a 1% increa ...

The increasing adoption of measurement units in electrical power distribution grids has enabled the deployment of data-driven and measurement-based control schemes. Such schemes rely on measurement-based estimated models, where the models are first estimat ...

This paper presents the RF characterization and modeling of a 22nm FDSOI technology down to 3.3K for quantum computing applications. The equivalent small-signal components are extracted analytically and automatically from the de-embedded two-port Y -parame ...

Integrated photonics will play a key role in quantum systems as they grow from few-qubit prototypes to tens of thousands of qubits. The underlying optical quantum technologies can only be realized through the integration of these components onto quantum ph ...

In the field of model order reduction for frequency response problems, the minimal rational interpolation (MRI) method has been shown to be quite effective. However, in some cases, numerical instabilities may arise when applying MRI to build a surrogate mo ...

AC loss in the Nb3Sn cable-in-conduit conductors (CICC) usually decreases after the conductor undergoes electromagnetic cycling. This can be attributed to the increase of inter-strand resistance due to the detachment of the strand-bonding during cyclic loa ...

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

We propose a scheme for universal quantum computing based on Kramers rare-earth ions. Their nuclear spins in the presence of a Zeeman-split electronic crystal field ground state act as "passive" qubits that store quantum information. The "active" qubits ar ...

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

Amorphous solids are structurally disordered. They are very common and include glasses, colloids, and granular materials, but are far less understood than crystalline solids. Key aspects of these materials are controlled by the presence of excitations in w ...

SiGe Based Cryo-BiCMOS Architectures for Quantum Applications

Chat with Graph Search

High-Efficiency Reconfigurable CMOS RF-to-DC Converter System for Ultra-Low-Power Wireless Sensor Nodes with Efficient MPPT Circuitry

Measurement - Based/Model-Less Estimation of Voltage Sensitivity Coefficients by Feedforward and LSTM Neural Networks in Power Distribution Grids

Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology

2022 Roadmap on integrated quantum photonics

A technique for non-intrusive greedy piecewise-rational model reduction of frequency response problems over wide frequency bands

Measurements of AC Loss Evolution in ITER TF Conductors

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Universal Quantum Computing Using Electronuclear Wavefunctions of Rare-Earth Ions

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Local excitations in amorphous solids