Publications related to SiGe Based Cryo-BiCMOS Architectures for Quantum Applications

Related publications (10)

High-Efficiency Reconfigurable CMOS RF-to-DC Converter System for Ultra-Low-Power Wireless Sensor Nodes with Efficient MPPT Circuitry

Sandro Carrara, Catherine Dehollain, Roberto La Rosa

This paper presents a novel CMOS RF-to-DC converter for ultra-low-power wireless sensor nodes powered by RF wireless power transfer. The proposed converter achieves 10% higher power conversion efficiency than a conventional rectifier, with only a 1% increa ...

2024

Measurement - Based/Model-Less Estimation of Voltage Sensitivity Coefficients by Feedforward and LSTM Neural Networks in Power Distribution Grids

Rahul Kumar Gupta

The increasing adoption of measurement units in electrical power distribution grids has enabled the deployment of data-driven and measurement-based control schemes. Such schemes rely on measurement-based estimated models, where the models are first estimat ...

Institute of Electrical and Electronics Engineers Inc.2024

Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology

Edoardo Charbon, Christian Enz, Farzan Jazaeri, Hung-Chi Han, Antonio D'Amico

This paper presents the RF characterization and modeling of a 22nm FDSOI technology down to 3.3K for quantum computing applications. The equivalent small-signal components are extracted analytically and automatically from the de-embedded two-port Y -parame ...

IEEE2022

2022 Roadmap on integrated quantum photonics

Niels Quack, Christophe Marcel Georges Galland

Integrated photonics will play a key role in quantum systems as they grow from few-qubit prototypes to tens of thousands of qubits. The underlying optical quantum technologies can only be realized through the integration of these components onto quantum ph ...

IOP Publishing Ltd2022

A technique for non-intrusive greedy piecewise-rational model reduction of frequency response problems over wide frequency bands

Fabio Nobile, Davide Pradovera

In the field of model order reduction for frequency response problems, the minimal rational interpolation (MRI) method has been shown to be quite effective. However, in some cases, numerical instabilities may arise when applying MRI to build a surrogate mo ...

2022

Measurements of AC Loss Evolution in ITER TF Conductors

Pierluigi Bruzzone, Kamil Sedlák

AC loss in the Nb3Sn cable-in-conduit conductors (CICC) usually decreases after the conductor undergoes electromagnetic cycling. This can be attributed to the increase of inter-strand resistance due to the detachment of the strand-bonding during cyclic loa ...

IEEE Institute of Electrical and Electronics Engineers2022

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Martin George Friedl, Lucas Güniat, Didem Dede, Nicholas Paul Morgan, Valerio Piazza, Akshay Balgarkashi, Elif Nur Dayi

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

Universal Quantum Computing Using Electronuclear Wavefunctions of Rare-Earth Ions

Gabriel Aeppli

We propose a scheme for universal quantum computing based on Kramers rare-earth ions. Their nuclear spins in the presence of a Zeeman-split electronic crystal field ground state act as "passive" qubits that store quantum information. The "active" qubits ar ...

AMER PHYSICAL SOC2021

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Mohammad Samizadeh Nikooytabalvandani, Catherine Erine, Minghua Zhu, Pirouz Sohi

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

Institute of Electrical and Electronics Engineers2021

Local excitations in amorphous solids

Wencheng Ji

Amorphous solids are structurally disordered. They are very common and include glasses, colloids, and granular materials, but are far less understood than crystalline solids. Key aspects of these materials are controlled by the presence of excitations in w ...

EPFL2021