A low-voltage CMOS-compatible time-domain photodetector, device & front end electronics

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Phase Shift Angle Segmentation Modulation for Soft-Switching Medium-Voltage DAB Converter With Series-Connected SiC MOSFETs

Chengmin Li

The medium-voltage (MV) dual active bridge (DAB) converter with series-connected SiC (S-SiC) MOSFETs is a promising solution for high-power-density isolated dc/dc converter. To improve the voltage sharing and reliability of S-SiC, relatively large snubber ...

Ieee-Inst Electrical Electronics Engineers Inc2024

The 2024 Magnonics Roadmap

Dirk Grundler, Thomas Yu, Ping Che, Qi Wang

Magnonics is a research field that has gained an increasing interest in both the fundamental and applied sciences in recent years. This field aims to explore and functionalize collective spin excitations in magnetically ordered materials for modern informa ...

2024

Light-Intensity Switching of Graphene/WSe2 Synaptic Devices

Giulia Tagliabue, Tarique Anwar, Hongyu Tang

2D van der Waals heterojunctions (vdWH) have emerged as an attractive platform for the realization of optoelectronic synaptic devices, which are critical for energy-efficient computing systems. Photogating induced by charge traps at the interfaces indeed r ...

Wiley2024

On-Chip Fully Reconfigurable Artificial Neural Network in 16 nm FinFET for Positron Emission Tomography

Edoardo Charbon, Claudio Bruschini, Emanuele Ripiccini, Andrada Alexandra Muntean

Smarty is a fully-reconfigurable on-chip feed-forward artificial neural network (ANN) with ten integrated time-to-digital converters (TDCs) designed in a 16 nm FinFET CMOS technology node. The integration of TDCs together with an ANN aims to reduce system ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications

Jean-Michel Sallese, Adil Koukab

The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total ionizing dose has been proven, the resilience to 10161MeVneq/cm2 fluence ...

2024

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

Generation of entangled photon pairs from a silicon bichromatic photonic crystal cavity

Matteo Galli, Marco Clementi

Integrated quantum photonics leverages the on-chip generation of nonclassical states of light to realize key functionalities of quantum devices. Typically, the generation of such nonclassical states relies on whispering gallery mode resonators, such as int ...

Aip Publishing2024

Silicon nitride electric-field poled microresonator modulator

Camille Sophie Brès, Edgars Nitiss, Boris Zabelich, Anton Stroganov, Christian André Clément Lafforgue

Stoichiometric silicon nitride is a highly regarded platform for its favorable attributes, such as low propagation loss and compatibility with complementary metal-oxide-semiconductor technology, making it a prominent choice for various linear and nonlinear ...

2024

Ripple Voltage and Loss Reduction of Single-Phase ISOP SST by Eliminating the Second Harmonic Current in LLC Converters

Drazen Dujic, Andrea Cervone, Tianyu Wei

In two-stage solid-state transformers with input-series output-parallel structure, the LLC converter operating at a fixed switching frequency is a common choice for the isolated DC/DC conversion stage because it can provide a high efficiency and a fixed vo ...

2024

Exploiting the Signal-Leak Bias in Diffusion Models

Athanasios Fitsios, Sabine Süsstrunk, Radhakrishna Achanta, Mahmut Sami Arpa, Martin Nicolas Everaert

There is a bias in the inference pipeline of most diffusion models. This bias arises from a signal leak whose distribution deviates from the noise distribution, creating a discrepancy between training and inference processes. We demonstrate that this signa ...

2024

General and Unified Model of the Power Flow Problem in Multiterminal AC/DC Networks

Mario Paolone, Willem Lambrichts

This paper proposes a generic and unified model of the power flow (PF) problem for multiterminal hybrid AC/DC networks. The proposed model is an extension of the standard AC-PF. The DC network is treated as an AC one and, in addition to the Slack, PV and P ...

IEEE Institute of Electrical and Electronics Engineers2024

Hitting with Probability One for Stochastic Heat Equations with Additive Noise

Robert Dalang, Fei Pu

We study the hitting probabilities of the solution to a system of d stochastic heat equations with additive noise subject to Dirichlet boundary conditions. We show that for any bounded Borel set with positive (d-6)\documentclass[12pt]{minimal} \usepackage{ ...

Springer/Plenum Publishers2024