Publication

Surface plasmon illumination scheme for contact lithography beyond the diffraction limit

2003
Conference Papers

Abstract

A novel local illumination scheme for optical lithography is proposed. It is based on the excitation of a surface plasmon on a metal film incorporated into a polymer light coupling mask for contact lithography. The electromagnetic field associated with the surface plasmon generates illumination volumes in the photoresist which are not limited by the diffraction (or Rayleigh) limit. Computer simulations indicate that the replication of 20 nm features using 630 nm illumination wavelength can be achieved with this technique. (C) 2003 Elsevier Science B.V. All rights reserved.

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2003
Conference Papers

Abstract

Official source

Related concepts (32)

Photolithography

In integrated circuit manufacturing, photolithography or optical lithography is a general term used for techniques that use light to produce minutely patterned thin films of suitable materials over a substrate, such as a silicon wafer, to protect selected areas of it during subsequent etching, deposition, or implantation operations. Typically, ultraviolet light is used to transfer a geometric design from an optical mask to a light-sensitive chemical (photoresist) coated on the substrate.

Surface plasmon

Surface plasmons (SPs) are coherent delocalized electron oscillations that exist at the interface between any two materials where the real part of the dielectric function changes sign across the interface (e.g. a metal-dielectric interface, such as a metal sheet in air). SPs have lower energy than bulk (or volume) plasmons which quantise the longitudinal electron oscillations about positive ion cores within the bulk of an electron gas (or plasma). The charge motion in a surface plasmon always creates electromagnetic fields outside (as well as inside) the metal.

Extreme ultraviolet lithography

Extreme ultraviolet lithography (also known as EUV or EUVL) is an optical lithography technology used in semiconductor device fabrication to make integrated circuits (ICs). It uses extreme ultraviolet (EUV) wavelengths near 13.5 nm, using a laser-pulsed tin (Sn) droplet plasma (Sn ions in the ionic states from Sn IX to Sn XIV give photon emission spectral peaks around 13.5 nm from 4p64dn - 4p54dn+1 + 4dn-14f ionic state transitions.), to produce a pattern by using a reflective photomask to expose a substrate covered by photoresist.

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