De l'effet de la polarisation électronique sur le transport de charge dans les semi-conducteurs moléculaires

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The ability to drive the plasma potential in a magnetized plasma column using strongly negatively biased emissive cathode is experimentally demonstrated. By analysing an extensive experimental dataset, and in particular the evolution of the radial profiles ...

Real-world samples of graphene often exhibit various types of out-of-plane disorder-ripples, wrinkles and folds-introduced at the stage of growth and transfer processes. These complex out-of-plane defects resulting from the interplay between self-adhesion ...

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

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The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

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This research presents a comprehensive comparative analysis of the passivation kinetics of OFP-Cu and OF-Cu in simulated repository electrolyte. The study employs a range of techniques, including potentiodynamic polarization, multi-step potentiostatic pola ...

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De l'effet de la polarisation électronique sur le transport de charge dans les semi-conducteurs moléculaires

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Plasma Potential Control in a Magnetized Plasma Column Using a Thermionic Cathode

Electronic transport in graphene with out-of-plane disorder

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Controlling On-Surface Photoactivity: The Impact of π-Conjugation in Anhydride-Functionalized Molecules on a Semiconductor Surface

Cryogenic Front-to-Back Coupling in FD-SOI for Tunable Qubits by Localized Metallic Back-Gate

Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves)

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Molecular hypergraph neural networks

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Polymer-Based Memristive Devices for Ammonium Biosensing

Topological photonic transport in disordered scattering networks

Automated all-functionals infrared and Raman spectra

Assessing the Charge Carrier Dynamics at Hybrid Interfaces of Organic Photoanodes for Solar Fuels

The autism susceptibility kinase, TAOK2, phosphorylates eEF2 and modulates translation

Theoretical explanation of passivation behavior in OFP-Cu and OF-Cu

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Lithium tantalate photonic integrated circuits for volume manufacturing

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process