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Characterization of deep levels in n-GaN by combined capacitance transient techniques

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Magnetic Properties of Surface Adsorbed Metal Adatoms and Dimers

Dante Philippe Sblendorio

This thesis investigates the magnetic properties of single atoms and dimers adsorbed on graphene and oxide decoupling layers supported by single crystal metal substrates, using scanning tunneling microscopy (STM) and spin-polarized scanning tunneling micro ...

EPFL2022

Electrical Spectroscopy of Defect States in Synthetic 2D Materials

Yanfei Zhao

Two-dimensional (2D) materials such as graphene and transition metal dichalcogenide (TMDC) are considered as one of the most promising material platforms for future electronic devices, due to their ultra-thin thickness and fascinating electrical and optica ...

EPFL2022

Recent Advances in Piezoelectric Materials for Electromechanical Transducer Applications

Dragan Damjanovic

Ferroelectricity has made a huge impact on science and technology since Joseph Valasek (then a Ph.D. student at the University of Minnesota) discovered it in 1920, a little longer than 100 years ago. Whereas Dr. Valasek's original research was motivated by ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Remco Franciscus Peter van Erp

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

EPFL2022

Composition and Interface Engineering of High Performing Perovskite Solar Cells

Mousa Abdulla M E Abuhelaiqa

Perovskite solar cells have been established as a disruptive technology in the domain of photo-voltaics. Their facile, low-temperature processing and high-power conversion efficiency make them stand-out among other mature solar technologies. The performanc ...

EPFL2022

van der Waals Epitaxy of Co10–xZn10–yMnx+y Thin Films: Chemical Composition Engineering and Magnetic Properties

Anna Fontcuberta i Morral, Dirk Grundler, Jean-Baptiste Leran, Simon Robert Escobar Steinvall, Rajrupa Paul, Ping Che, Mohammad Hamdi, Andrea Mucchietto

Topologically protected magnetic skyrmions have raised interest for future spintronics applications. One of the main challenges is the synthesis of room temperature skyrmion-hosting materials that are compatible with thin-film technology. We present an app ...

2021

Crystalline Order in Compound Semiconductors in Nanoscale Structures and Thin Films

Mahdi Zamani

Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...

EPFL2021

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

Anna Fontcuberta i Morral, Wonjong Kim, Lucas Güniat, Valerio Piazza

Semiconductor nanowires (NWs) have been investigated for decades, but their application into commercial products is still difficult to achieve, with triggering causes related to the fabrication cost and structure complexity. Dopant control at the nanoscale ...

2021

Blumino: The First Fully Integrated Analog SiPM With On-Chip Time Conversion

Edoardo Charbon, Andrei Ardelean, Emanuele Ripiccini, Andrada Alexandra Muntean, Esteban Venialgo Araujo

Blumino is the first analog silicon photomultiplier with integrated amplifier, comparator and time-to-digital converter (TDC). The combination of a photodetector together with on-chip readout circuitry enables system-level advantages, such as internal para ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Modeling Current Transients in a Reciprocal Motion Tribocorrosion Experiment

Stefano Mischler, Anna Neus Igual Muñoz, Shoufan Cao

Tribocorrosion of passivating metals is a dynamic phenomenon causing degradation of materials by a combination of mechanical wear and electrochemical dissolution. The mechanical action typically produces a local removal of particles, metal as well as oxide ...

ELECTROCHEMICAL SOC INC2021

Low-Power and Wide-Tuning Range Frequency Generation for FMCW Radars in Advanced CMOS Technologies

Francesco Chicco

Nowadays, the internet of things (IoT) nodes have started to spread in various domains of our society, from the industrial to the domestic environment. The remote sensing is one among their fundamental functions. The implementation of a radio detection and ...

EPFL2021

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

EPFL2021

Experimental Evaluation of Steel Columns under Seismic Hazard-Consistent Collapse Loading Protocols

Dimitrios Lignos

This paper presents results from 21 large-scale experiments on steel columns that examined their collapse behavior as related to steel moment resisting frames (MRFs). The test specimens included wide-flange and square hollow structural shapes (HSS) and wer ...

2021

p-NiO junction termination extensions for GaN power devices

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Alessandro Floriduz, Taifang Wang

We report the demonstration of p-NiO layers as junction termination extensions (JTEs) for realizing high-performance GaN power devices. The p-NiO was deposited by RF sputtering, a flexible process which enables to achieve high hole densities. In this work, ...

IOP PUBLISHING LTD2021