Publication

Stacking faults in pseudomorphic ZnSe-GaAs and lattice-matched ZnSe-In0.04Ga0.96As layers

Jean-Daniel Ganière
1997
Journal Articles

Abstract

We report transmission electron microscopy studies of native extended defects in pseudomorphic ZnSe/GaAs (001) and lattice-matched ZnSe-In0.04Ga0.96As (001) heterostructures. The dominant defects present in the layers were identified as Shockley stacking fault pairs lying on (111) and fault planes and single Frank stacking faults lying on or fault planes by comparing experimental images with the predictions obtained with the g.b = 0 rule as well as with simulated images.

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https://infoscience.epfl.ch/entities/publication/9921c846-962e-40cc-9b59-dd58f3fd724b

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Jean-Daniel Ganière
1997
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/9921c846-962e-40cc-9b59-dd58f3fd724b

About this result

Related concepts (22)

Dislocation

In materials science, a dislocation or Taylor's dislocation is a linear crystallographic defect or irregularity within a crystal structure that contains an abrupt change in the arrangement of atoms. The movement of dislocations allow atoms to slide over each other at low stress levels and is known as glide or slip. The crystalline order is restored on either side of a glide dislocation but the atoms on one side have moved by one position. The crystalline order is not fully restored with a partial dislocation.

Transmission electron microscopy

Transmission electron microscopy (TEM) is a microscopy technique in which a beam of electrons is transmitted through a specimen to form an image. The specimen is most often an ultrathin section less than 100 nm thick or a suspension on a grid. An image is formed from the interaction of the electrons with the sample as the beam is transmitted through the specimen. The image is then magnified and focused onto an imaging device, such as a fluorescent screen, a layer of photographic film, or a sensor such as a scintillator attached to a charge-coupled device.

Heterojunction

A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably.

Related publications (8)

Stacking faults in pseudomorphic ZnSe-GaAs and lattice-matched ZnSe-In0.04Ga0.96As layers

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